4–49
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Preliminary Information
Low rDS(on) Small-Signal MOSFETs
TMOS Single N-Channel
Field Effect Transistors
Part of the GreenLine
Portfolio of devices with energy–
conserving traits.
These miniature surface mount MOSFETs utilize Motorola’s
High Cell Density, HDTMOS process. Low rDS(on) assures
minimal power loss and conserves energy, making this device
ideal for use in small power management circuitry. Typical
applications are dc–dc converters, power management in
portable and battery–powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature TSOP 6 Surface Mount Package Saves Board Space
Visit our Web Site at http://www.mot–sps.com/ospd
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 20
Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Pulsed Drain Current (tp ≤ 10 s)
ID
IDM
1.75
20
A
Total Power Dissipation @ TA = 25°C
PD
950
mW
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Thermal Resistance — Junction–to–Ambient
R
θJA
250
°C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
TL
260
°C
Device Marking = 3G
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MGSF3454XT1
7
″
8 mm embossed tape
3000
MGSF3454XT3
13
″
8 mm embossed tape
10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
CASE 318G–02, Style 1
TSOP 6 PLASTIC
MGSF3454XT1
N–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 50 m (TYP)
Motorola Preferred Device
D
G
D
S
DRAIN
3
GATE
SOURCE
4
6
5
2
1