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参数资料
| 型号： | MJ1000 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | METAL, TO-3, 2 PIN |
| 文件页数： | 1/59页 |
| 文件大小： | 361K |
| 代理商： | MJ1000 |
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3–423
Motorola Bipolar Power Transistor Device Data
Medium-Power Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc
Monolithic Construction with Built–in Base–Emitter Shunt Resistors
MAXIMUM RATINGS
Rating
Symbol
MJ1000
MJ1001
Unit
Collector–Emitter Voltage
VCEO
60
80
Vdc
Collector–Base Voltage
VCB
60
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current
IC
10
Adc
Base Current
IB
0.1
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
90
0.515
Watts
W/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.94
_C/W
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈ 4.0 k
≈ 60
PNP
MJ900
MJ901
BASE
EMITTER
COLLECTOR
≈ 4.0 k
≈ 60
NPN
MJ1000
MJ1001
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJ1000
MJ1001
10 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 80 VOLTS
90 WATTS
*
*Motorola Preferred Device
NPN
CASE 1–07
TO–204AA
(TO–3)
REV 7
相关PDF资料 |
PDF描述 |
|---|---|
| MJ1001 | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| MJ10022 | 40 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| MJ3000 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| MJ2500 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| MJ3281A | 15 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ1000_12 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:COMPLEMENTARY POWER DARLINGTONS |
| MJ10000 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 450V 20A T 制造商:SOLID STATE 功能描述:DARLINGTON TRANSISTOR, NPN, 450V, 20A, T 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 450V, 20A, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:450V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:600; Operating Temperature Min:-65C ;RoHS Compliant: Yes |
| MJ10001 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:50; Operating Temperature Min:-65C; Operating Temperature Max:200C ;RoHS Compliant: Yes |
| MJ10002 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| MJ10003 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
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