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参数资料
| 型号： | MGW14N60ED |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 18 A, 600 V, N-CHANNEL IGBT, TO-247AE |
| 封装： | CASE 340K-01, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 154K |
| 代理商： | MGW14N60ED |
MGW14N60ED
2
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 Adc)
Temperature Coefficient (Positive)
V(BR)CES
600
—
870
—
Vdc
mV/
°C
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
V(BR)ECS
15
—
Vdc
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
ICES
—
10
200
Adc
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
IGES
—
50
Adc
ON CHARACTERISTICS(1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 5.0 Adc)
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 10 Adc)
VCE(on)
—
1.6
1.5
2.0
1.9
—
2.4
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/
°C
Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc)
gfe
—
5.0
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
Cies
—
1020
—
pF
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Coes
—
104
—
Transfer Capacitance
f = 1.0 MHz)
Cres
—
17
—
SWITCHING CHARACTERISTICS(1)
Turn–On Delay Time
(V
360 Vd
I
10 Ad
td(on)
—
38
—
ns
Rise Time
(V
360 Vd
I
10 Ad
tr
—
40
—
Turn–Off Delay Time
(VCC = 360 Vdc, IC = 10 Adc,
V
15 Vd
L
300 H
td(off)
—
120
—
Fall Time
VGE = 15 Vdc, L = 300 mH,
RG = 20 )
tf
—
204
—
Turn–Off Switching Loss
RG = 20 )
Energy losses include “tail”
Eoff
—
0.35
0.45
mJ
Turn–On Switching Loss
Eon
—
0.27
0.35
Total Switching Loss
Ets
—
0.62
0.80
Turn–On Delay Time
(V
360 Vd
I
10 Ad
td(on)
—
32
—
ns
Rise Time
(V
360 Vd
I
10 Ad
tr
—
30
—
Turn–Off Delay Time
(VCC = 360 Vdc, IC = 10 Adc,
V
15 Vd
L
300 H
td(off)
—
208
—
Fall Time
VGE = 15 Vdc, L = 300 mH,
RG = 20 , TJ = 125°C)
tf
—
212
—
Turn–Off Switching Loss
RG = 20 , TJ = 125 C)
Energy losses include “tail”
Eoff
—
0.63
—
mJ
Turn–On Switching Loss
Eon
—
0.40
—
Total Switching Loss
Ets
—
1.03
—
Gate Charge
(V
360 Vdc I
10 Adc
QT
—
57
—
nC
(VCC = 360 Vdc, IC = 10 Adc,
VGE = 15 Vdc)
Q1
—
12
—
VGE = 15 Vdc)
Q2
—
25
—
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 5.0 Adc)
(IEC = 5.0 Adc, TJ = 125°C)
(IEC = 10 Adc)
VFEC
—
1.7
1.6
1.3
2.0
1.9
—
2.3
Vdc
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(continued)
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