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参数资料
| 型号： | MGW14N60ED |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 18 A, 600 V, N-CHANNEL IGBT, TO-247AE |
| 封装： | CASE 340K-01, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 154K |
| 代理商： | MGW14N60ED |
MGW14N60ED
3
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
(I
10 Ad
V
360 Vd
trr
—
75
—
ns
(IF = 10 Adc, VR = 360 Vdc,
ta
—
31
—
( F
,
R
,
dIF/dt = 200 A/s)
tb
—
44
—
Reverse Recovery Stored Charge
QRR
—
0.16
—
C
Reverse Recovery Time
(I
10 Ad
V
360 Vd
trr
—
139
—
ns
(IF = 10 Adc, VR = 360 Vdc,
ta
—
45
—
( F
,
R
,
dIF/dt = 200 A/s, TJ = 125°C)
tb
—
94
—
Reverse Recovery Stored Charge
QRR
—
0.40
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25
″ from package to emitter bond pad)
LE
—
7.5
—
nH
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
6
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
30
20
10
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
8
0
10
0
13
17
5
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
30
20
10
0
TJ, JUNCTION TEMPERATURE (°C)
–25
–50
2.3
2.1
1.9
1.7
1.5
0
15
I C
,COLLECT
OR
CURRENT
(AMPS)
I
V
CE
,COLLECT
OR–T
O–EMITTER
VOL
TAGE
(VOL
TS)
0
24
2
4
6
20
30
79
11
25
50
100
75
125
150
I C
,COLLECT
OR
CURRENT
(AMPS)
,COLLECT
OR
CURRENT
(AMPS)
C
TJ = 25°C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
TJ = 125°C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
TJ = 125°C
25
°C
VCE = 100 V
5
ms PULSE WIDTH
VGE = 15 V
80
ms PULSE WIDTH
IC = 10 A
5.0 A
7.5 A
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