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参数资料
| 型号： | MHL9318 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 衰减器 |
| 英文描述： | THE RF LINE CELLULAR BAND RF LINEAR LDMOS AMPLIFIER |
| 中文描述： | 860 MHz - 900 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封装： | CASE 301AS-01, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 276K |
| 代理商： | MHL9318 |
1
MHL9318
Motorola, Inc. 2002
The RF Line
Designed for ultra–linear amplifier applications in
50 ohm system
s operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for the most demanding analog or digital modulation
systems, such as TDMA and CDMA.
Third Order Intercept: 49 dBm Typ
Power Gain: 17.5 dB Typ (@ f = 880 MHz)
Excellent Phase Linearity and Group Delay Characteristics
Ideal for Feedforward Base Station Applications
For Use in TDMA and CDMA Multi–Carrier Applications
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
V
DD
30
Vdc
RF Input Power
P
in
+20
dBm
Storage Temperature Range
T
stg
–40 to +100
°
C
Operating Case Temperature Range
T
C
–20 to +100
°
C
ELECTRICAL CHARACTERISTICS
(V
DD
= 28 Vdc, T
C
= 25
°
C; 50
System)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current
I
DD
—
500
560
mA
Power Gain
(f = 880 MHz)
G
p
17
17.5
18.5
dB
Gain Flatness
(f = 860–900 MHz)
G
F
—
0.1
0.2
dB
Power Output @ 1 dB Comp.
(f = 880 MHz)
P
out
1 dB
—
35.5
—
dBm
Input VSWR
(f = 860–900 MHz)
VSWR
in
—
1.2:1
1.5:1
Output VSWR
(f = 860–900 MHz)
VSWR
out
—
1.2:1
1.5:1
Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz)
ITO
47
49
—
dBm
Noise Figure
(f = 960 MHz)
NF
—
3
4.5
dB
Order this document
by MHL9318/D
SEMICONDUCTOR TECHNICAL DATA
3.0 W, 17.5 dB
860–900 MHz
RF LINEAR LDMOS AMPLIFIER
CASE 301AS–01, STYLE 1
REV 2
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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| MHL9318D | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:THE RF LINE CELLULAR BAND RF LINEAR LDMOS AMPLIFIER |
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