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参数资料
| 型号： | MHPM7B30A60B |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | M39012 MIL RF CONNECTOR |
| 中文描述： | 30 A, 600 V, N-CHANNEL IGBT |
| 封装： | PLASTIC PACKAGE-25 |
| 文件页数： | 3/10页 |
| 文件大小： | 258K |
| 代理商： | MHPM7B30A60B |
3
MHPM7B30A60B
MOTOROLA
ELECTRICAL CHARACTERISTICS (continued)
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
BRAKE CIRCUIT
Gate-Emitter Leakage Current (VCE = 0 V, VGE =
±
20 V)
Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V)
IGES
ICES
–
–
±
20
μ
A
TJ = 25
°
C
TJ = 125
°
C
–
–
–
–
100
2.0
μ
A
mA
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 30 A)
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)
Input Gate Charge (VCE = 300 V, IC = 30 A, VGE = 15 V)
Fall Time – Inductive Load
(VCE = 300 V, IC = 30 A, VGE = 15 V, RG = 150
)
VGE(th)
V(BR)CES
VCE(SAT)
Cies
4.0
6.0
8.0
V
600
700
–
V
–
2.3
3.5
V
–
6600
–
pF
QT
tfi
–
220
–
nC
–
300
500
ns
Turn-On Energy
(VCE = 300 V, IC = 30 A, VGE = 15 V, RG = 150
)
E(on)
–
–
2.5
mJ
Turn-Off Energy
(VCE = 300 V, IC = 30 A, VGE = 15 V, RG = 150
)
E(off)
–
–
2.5
mJ
Diode Forward Voltage (IF = 30 A)
Diode Reverse Leakage Current
VF
IR
R
θ
JC
R
θ
JC
–
1.35
2.0
V
–
–
50
μ
A
Thermal Resistance – IGBT
–
–
1.2
°
C/W
Thermal Resistance – Diode
–
–
2.7
°
C/W
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