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参数资料
| 型号： | MHVIC910HR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 衰减器 |
| 英文描述： | 921 MHz − 960 MHz SiFET RF Integrated Power Amplifier |
| 中文描述： | 921 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封装： | PLASTIC, CASE 978-03, FP-16 |
| 文件页数： | 5/12页 |
| 文件大小： | 222K |
| 代理商： | MHVIC910HR2 |
MHVIC910HR2
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
970
36
43
910
42
41
40
39
38
37
960
950
940
930
920
T
C
= 30
°
C, I
DQ3
= 150 mA
T
C
= +25
°
C, I
DQ3
= 150 mA
T
C
= +25
°
C, I
DQ3
= 120 mA
T
C
= +25
°
C, I
DQ3
= 110 mA
T
C
= +85
°
C, I
DQ3
= 150 mA
100
5
1
10
3
1
3
5
7
9
11
13
15
1
I
DQ3
= 150 mA
f = 960 MHz
T
C
= 30
°
C
+85
°
C
+25
°
C
970
36
43
910
42
41
40
39
38
37
960
950
940
930
920
T
C
= 30
°
C, I
DQ3
= 150 mA
T
C
= +25
°
C, I
DQ3
= 150 mA
T
C
= +25
°
C, I
DQ3
= 120 mA
T
C
= +85
°
C, I
DQ3
= 150 mA
43
12
35
0
T
C
= 30
°
C, I
DQ3
= 150 mA
42
41
40
39
38
37
36
10
8
6
4
2
T
C
= +25
°
C, I
DQ3
= 150 mA
T
C
= +25
°
C, I
DQ3
= 120 mA
T
C
= +25
°
C, I
DQ3
= 110 mA
T
C
= +85
°
C, I
DQ3
= 150 mA
Figure 5. Power Gain versus
Output Power
P
out
, OUTPUT POWER (WATTS)
Figure 6. Power Added Efficiency
versus Output Power
P
out
, OUTPUT POWER (WATTS)
G
Figure 7. Output Power versus Input Power
Figure 8. Power Gain versus Frequency
P
out
= 10 W
f, FREQUENCY (MHz)
Figure 9. Power Gain versus Frequency
P
out
= P1dB
f, FREQUENCY (MHz)
P
G
,
p
P
Figure 10. Power Added Efficiency versus Frequency
P
out
= 10 W
50
12
10
0
I
DQ3
= 150 mA
f = 960 MHz
T
C
= 30
°
C
+85
°
C
+25
°
C
45
40
35
30
25
20
15
10
8
6
4
2
970
43
48
910
47.5
47
46.5
46
45.5
45
44.5
44
43.5
960
950
940
930
920
f = 960 MHz
T
C
= +25
°
C, I
DQ3
= 150 mA
T
C
= +25
°
C, I
DQ3
= 120 mA
P
P
in
, INPUT POWER (dBm)
G
,
p
f, FREQUENCY (MHz)
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