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参数资料
| 型号： | MI2060C-E3/4W |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 82K |
| 代理商： | MI2060C-E3/4W |
New Product
MI2050C & MI2060C
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89007
Revision: 19-May-08
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous
forward voltage per diode (1)
IF = 5 A
IF = 10 A
TJ = 25 °C
VF
0.554
0.649
-
0.74
V
IF = 5 A
IF = 10 A
TJ = 125 °C
0.484
0.570
-
0.62
Reverse current per diode (2)
rated VR
TJ = 25 °C
TJ = 125 °C
IR
15
10.8
150
25
A
mA
Typical junction capacitance
4.0 V, 1 MHz
CJ
300
-
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MI2050C
MI2060C
UNIT
Typical thermal resistance per diode
RθJC
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-262AA
MI2060C-E3/4W
1.456
4W
50/tube
Tube
Figure 1. Forward Derating Curve (Total)
0
4
8
12
20
0
50
100
150
16
Resistive or Inductive Load
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
60
40
80
140
120
100
160
1
100
10
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
P
eak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
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