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参数资料
| 型号： | MI2060C-E3/4W |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 82K |
| 代理商： | MI2060C-E3/4W |
New Product
MI2050C & MI2060C
Vishay General Semiconductor
Document Number: 89007
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
100
10
1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
100
10
1
0.1
0.01
0.001
10
20
30
40
50
60
70
80
90
100
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
10
1
100
1000
10 000
100
0.1
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
0.01
10
1
100
10
100
0.1
1
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
TO-262AA
HEATSINK
PIN 2
PIN 1
PIN 3
0.401 (10.19)
0.381 (9.68)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.35)
K
12
3
0.055 (1.40)
0.047 (1.19)
0.510 (12.95)
0.470 (11.94)
PIN
0.411 (10.45) MAX.
0.250 (6.35) MIN.
30° (TYP.)
(REF.)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.057 (1.45)
0.045 (1.14)
0.160 (4.06)
0.140 (3.56)
0.950 (24.13)
0.920 (23.37)
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