- 您现在的位置：买卖IC网 > PDF目录20584 > MI3060C-E3/4W (Vishay General Semiconductor)DIODE SCHOT 30A 60V DUAL TO262AA PDF资料下载
参数资料
| 型号： | MI3060C-E3/4W |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 144K |
| 描述： | DIODE SCHOT 30A 60V DUAL TO262AA |
| 标准包装： | 1,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 720mV @ 15A |
| 电流 - 在 Vr 时反向漏电： | 350µA @ 60V |
| 电流 - 平均整流 (Io)（每个二极管）： | 15A |
| 电压 - (Vr)（最大）： | 60V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262AA |
| 包装： | 管件 |
New Product
M3060C, MF3060C & MI3060C
Vishay General Semiconductor
Document Number: 89009
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
? Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0
flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
15 A x 2
VRRM
60 V
IFSM
160 A
VF at IF
= 15 A 0.547 V
TJ
max. 150 °C
TO-220AB
M3060C
MI3060C
1
32
3
1
2
K
CASE
PIN 2
PIN 1
PIN 3
PIN 2
PIN 1
PIN 3
TO-262AA
MF3060C
ITO-220AB
PIN 2
PIN 1
PIN 3
3
1
2
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL M3060C MF3060C MI3060C UNIT
Maximum repetitive peak reverse voltage VRRM
60 V
Maximum average forward rectified current
total device
per diode
IF(AV)
30
15
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
160 A
Peak repetitive reverse current per diode at tp
= 2 μs, 1 kHz I
RRM
0.5 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG
- 65 to + 150 °C
Isolation voltage from terminal
to heatsink with t = 1 min V
AC
1500 V
相关PDF资料 |
PDF描述 |
|---|---|
| MBRF2060CTHE3/45 | DIODE SCHOTTKY 20A 60V ISO-DUAL |
| MBRF2060CT-E3/45 | DIODE SCHOTTKY 20A 60V ISO-DUAL |
| MBRF2050CTHE3/45 | DIODE SCHOTTKY 20A 50V ISO-DUAL |
| MBRF2050CT-E3/45 | DIODE SCHOTTKY 20A 50V ISO-DUAL |
| PX3511BDAG | IC DRVR SYNC BUCK HF 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MI308 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:PIN DIODE RF POWER SWITCHING |
| MI3100H27AH | 制造商:未知厂家 制造商全称:未知厂家 功能描述:5mm X 7mm Ceramic SMD |
| MI3100H27H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:5mm X 7mm Ceramic SMD |
| MI3100H48AH | 制造商:未知厂家 制造商全称:未知厂家 功能描述:5mm X 7mm Ceramic SMD |
| MI3100H48AH-11.0592MHZ-T | 制造商:MMD Components 功能描述: |
发布紧急采购，3分钟左右您将得到回复。