参数资料
型号: MIC261203YJL EV
厂商: Micrel Inc
文件页数: 18/31页
文件大小: 0K
描述: BOARD EVAL FOR MIC261203YJL
标准包装: 1
系列: HyperLight Load®, SuperSwitcher IIG™
主要目的: DC/DC,步降
输出及类型: 1,隔离
输出电压: 5V
电流 - 输出: 12A
输入电压: 5.5 ~ 28 V
稳压器拓扑结构: 降压
频率 - 开关: 600kHz
板类型: 完全填充
已供物品:
已用 IC / 零件: MIC261203
其它名称: 576-4014
Micrel, Inc.
MOSFET Gate Drive
The Block Diagram (Figure 1) shows a bootstrap circuit,
consisting of D1 (a Schottky diode is recommended) and
C BST . This circuit supplies energy to the high-side drive
circuit. Capacitor C BST is charged, while the low-side
MOSFET is on, and the voltage on the SW pin is
approximately 0V. When the high-side MOSFET driver is
turned on, energy from C BST is used to turn the MOSFET
on. As the high-side MOSFET turns on, the voltage on
the SW pin increases to approximately V IN . Diode D1 is
reverse biased and C BST floats high while continuing to
keep the high-side MOSFET on. The bias current of the
high-side driver is less than 10mA so a 0.1 μ F to 1 μ F is
sufficient to hold the gate voltage with minimal droop for
the power stroke (high-side switching) cycle, i.e. Δ BST =
10mA x 1.67 μ s/0.1 μ F = 167mV. When the low-side
MOSFET is turned back on, C BST is then recharged
through D1. A small resistor R G , which is in series with
C BST , can be used to slow down the turn-on time of the
high-side N-channel MOSFET.
The drive voltage is derived from the V DD supply voltage.
The nominal low-side gate drive voltage is V DD and the
nominal high-side gate drive voltage is approximately
V DD – V DIODE , where V DIODE is the voltage drop across
D1. An approximate 30ns delay between the high-side
and low-side driver transitions is used to prevent current
from simultaneously flowing unimpeded through both
MOSFETs.
MIC261203
July 2011
18
M9999-071311-A
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