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| 型号： | MIC4100YM |
| 厂商： | Micrel Inc |
| 文件页数： | 13/18页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET 100V CMOS 8SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 27ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 118V |
| 电源电压： | 9 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-1183 |
Micrel, Inc.
MIC4100/1
external
diode
Vdd
HB
C B
Vin
Dissipation during the external MOSFET Turn-On
Energy from capacitor C B is used to charge up the input
capacitance of the MOSFET (Cgd and Cgs). The energy
delivered to the MOSFET is dissipated in the three
resistive components, Ron, Rg and Rg_fet. Ron is the on
resistance of the upper driver MOSFET in the MIC4100.
HI
Level
shift
HO
Rg is the series resistor (if any) between the driver IC and
the MOSFET. Rg_fet is the gate resistance of the
MOSFET. Rg_fet is usually listed in the power MOSFET’s
HS
specifications. The ESR of capacitor C B and the resistance
of the connecting etch can be ignored since they are much
less than Ron and Rg_fet.
LI
Vss
Figure 6
LO
The effective capacitance of Cgd and Cgs is difficult to
calculate since they vary non-linearly with Id, Vgs, and
Vds. Fortunately, most power MOSFET specifications
include a typical graph of total gate charge vs. Vgs. Figure
8 shows a typical gate charge curve for an arbitrary power
MOSFET. This chart shows that for a gate voltage of 10V,
the MOSFET requires about 23.5nC of charge. The energy
dissipated by the resistive components of the gate drive
circuit during turn-on is calculated as:
Gate Driver Power Dissipation
E = 1 2 × Ciss × V gs
2
Power dissipation in the output driver stage is mainly
caused by charging and discharging the gate to source
and gate to drain capacitance of the external MOSFET.
Figure 7 shows a simplified equivalent circuit of the
MIC4100 driving an external MOSFET.
but
Q = C × V
so
E = 1/2 × Qg × V gs
Vdd
Ron
HB
External
FET
Cgd
where
Ciss is the total gate capacitanc e of the MOSFET
Gate Charge
C B
HO
Rg
Rg_fet
10
8
V DS = 50V
I D = 6.9A
Roff
HS
Figure 7
Cgs
6
4
2
0
0
5
10
15
20
25
Qg - Total Gate Charge (nC)
Figure 8
The same energy is dissipated by Roff, Rg and Rg_fet
when the driver IC turns the MOSFET off. Assuming Ron
is approximately equal to Roff, the total energy and power
dissipated by the resistive drive elements is:
March 2006
13
M9999-031506
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| MIC4128YMME | IC DRIVER MOSFET 1.5A DUAL 8MSOP |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4100YM TR | 功能描述:功率驱动器IC 100V HalfBridge MOSFET Driver 2A SOURCE/SINK CURRENT CMOS INPUT (Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4101 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:100V Half Bridge MOSFET Drivers |
| MIC4101BM | 功能描述:IC DRIVER MOSFET 100V TTL 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC4101BM TR | 功能描述:IC DRIVER MOSFET 100V TTL 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC4101YM | 功能描述:功率驱动器IC 100V HalfBridge MOSFET Driver 2A SOURCE/SINK CURRENT TTL INPUT (Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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