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参数资料
| 型号： | MIC4100YM |
| 厂商： | Micrel Inc |
| 文件页数： | 15/18页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET 100V CMOS 8SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 27ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 118V |
| 电源电压： | 9 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-1183 |
Micrel, Inc.
capacitors are recommended for most applications. The
minimum capacitance value should be increased if low
voltage capacitors are use since even good quality
dielectric capacitors, such as X5R, will lose 40% to 70% of
MIC4100/1
is from the source of the MOSFET and back to capacitor
C B . The high-side circuit return path usually does not have
a low impedance ground plane so the etch connections in
this critical path should be short and wide to minimize
their capacitance value at the rated voltage.
parasitic inductance. As
with
the low-side
circuit,
Placement of the decoupling capacitors is critical. The
bypass capacitor for Vdd should be placed as close as
possible between the Vdd and Vss pins. The bypass
capacitor (C B ) for the HB supply pin must be located as
close as possible between the HB and HS pins. The etch
connections must be short, wide and direct. The use of a
ground plane to minimize connection impedance is
recommended. Refer to the section on layout and
component placement for more information.
The voltage on the bootstrap capacitor drops each time it
delivers charge to turn on the MOSFET. The voltage drop
depends on the gate charge required by t he MOSFET.
impedance between the MOSFET source and the
decoupling capacitor causes negative voltage feedback
which fights the turn-on of the MOSFET.
It is important to note that capacitor CB must be placed
close to the HB and HS pins. This capacitor not only
provides all the energy for turn-on but it m ust also keep HB
pin noise and ripple low for proper operation of the high-
side drive circuitry.
Low-side drive turn-on
current path
Most MOSFET specifications specify gate charge vs. Vgs
voltage. Based on this information and a recommended
Vdd
LO
? V HB of less than 0.1V, the minimum value of bootstrap
capacitance is calculated as:
gnd
plane
C Vdd
HB
Vss
C B ≥
Q gate
? V HB
HO
LI
gnd
plane
where : Q gate = Total Gate Charge at V HB
? V HB = Voltage drop at the HB pin
C B
HS
Level
shift
HI
The decoupling capacitor for the Vdd input may be
calculated in with the same formula; however, the two
capacitors are usually equal in value.
High-side drive turn-on
current path
Turn-On Current Paths
Figure 9
Grounding, Component Placement and Circuit Layout
Nanosecond switching speeds and am pere peak currents
in and around the MIC4100 and MIC4101 drivers require
proper placement and trace routing of all components.
Improper placement may cause degraded noise immunity,
false switching, excessive ringing or circuit latch-up.
Figure 9 shows the critical current paths when the driver
outputs go high and turn on the external MOSFETs. It also
helps demonstrate the need for a low impedance g round
plane. Charge needed to turn-on the MOSFET gates
comes from the decoupling capacitors C VDD and C B .
Current in the low-side gate driver flows from C VDD through
the internal driver, into the MOSFET gate and out the
Source. The return connection back to the decoupling
capacitor is made through the ground plane. Any
inductance or resistance in the ground return path causes
a voltage spike or ringing to appear on the source of the
MOSFET. This voltage works against the gate drive
voltage and can either slow down or turn off the MOSFET
during the period where it should be turned on.
Current in the high-side driver is sourced from capacitor C B
and flows into the HB pin and out the HO pin, into the gate
of the high side MOSFET. The return path for the current
Figure 10 shows the critical cu rren t paths when the driver
outputs g o low and turn off the ext ernal MOSFETs. Short,
lo w impedance connections are important during turn-off
for the same reasons given in the turn-on explanation.
Current flowing through the internal diode replenishes
charge in the bootstrap capacitor, CB.
March 2006
15
M9999-031506
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4100YM TR | 功能描述:功率驱动器IC 100V HalfBridge MOSFET Driver 2A SOURCE/SINK CURRENT CMOS INPUT (Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4101 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:100V Half Bridge MOSFET Drivers |
| MIC4101BM | 功能描述:IC DRIVER MOSFET 100V TTL 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC4101BM TR | 功能描述:IC DRIVER MOSFET 100V TTL 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC4101YM | 功能描述:功率驱动器IC 100V HalfBridge MOSFET Driver 2A SOURCE/SINK CURRENT TTL INPUT (Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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