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参数资料
| 型号： | MIC4103YM |
| 厂商： | Micrel Inc |
| 文件页数： | 13/18页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 100V CMOS 8SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 24ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 118V |
| 电源电压： | 9 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 托盘 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-1589 |
Micrel
Application Information
The average reverse current and power dissipation due to
reverse recovery can be estimated by:
C B
MIC4103/4104
Vin
I RR ( AVE ) = 0 . 5 × I RRM × t rr × f S
Vdd
HB
Pdiode RR = I RR ( AVE ) × V REV
where : I RRM = Peak Reverse Recovery Current
t rr = Reverse Recovery Time
The total diode power dissipation is:
HI
LI
Level
shift
HO
HS
LO
Pdiode total = Pdiode fwd + Pdiode RR
Vss
An optional external bootstrap diode may be used instead
of the internal diode (Figure 6). An external diode may be
useful if high gate charge MOSFETs are being driven and
the power dissipation of the internal diode is contributing to
excessive die temperatures. The voltage drop of the
external diode must be less than the internal diode for this
option to work. The reverse voltage across the diode will
be equal to the input voltage minus the V DD supply voltage.
A 100V Schottky diode will work for most 72V input
telecom applications. The above equations can be used to
calculate power dissipation in the external diode, however,
if the external diode has significant reverse leakage
Figure 6. Optional Bootstrap Diode
Gate Driver Power Dissipation
Power dissipation in the output driver stage is mainly
caused by charging and discharging the gate to source
and gate to drain capacitance of the external MOSFET.
Figure 7 shows a simplified equivalent circuit of the
MIC4103 driving an external MOSFET.
current, the power dissipated in that diode due to reverse
leakage can be calculated as:
External
Pdiode REV = I R × V REV × ( 1 ? D )
where : I R = Reverse current flow at V REV and T J
Vdd
Ron
HB
Cgd
FET
V REV = Diode Reverse Voltage
D = Duty Cycle = t ON / f S
fs = switching frequency of the power supply
C B
Roff
H O
Rg
Rg_fet
Cgs
The on-time is the time the high-side switch is conducting.
In most power supply topologies, the diode is reverse
biased during the switching cycle off-time.
HS
Figure 7. MIC4103 Driving an External MOSFET
November 2010
13
M9999-110910-B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4103YM TR | 功能描述:功率驱动器IC 100V Half Bridge driver, 3/2A sink/Source Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4104 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:100V Half Bridge MOSFET Drivers 3/2A Sinking/Sourcing Current |
| MIC4104YM | 功能描述:功率驱动器IC 100V HalfBridge MOSFET Driver 3/2A SOURCE/SINK CURRENT TTL INPUT (Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4104YM TR | 功能描述:功率驱动器IC 100V HalfBridge MOSFET Driver 3/2A SOURCE/SINK CURRENT TTL INPUT (Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4104YML | 制造商:RF Micro Devices Inc 功能描述: |
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