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参数资料
| 型号： | MIC4103YM |
| 厂商： | Micrel Inc |
| 文件页数： | 15/18页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 100V CMOS 8SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 24ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 118V |
| 电源电压： | 9 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 托盘 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-1589 |
C B ≥
Micrel
The die temperature may be calculated once the total
power dissipation is known.
T J = T A + Pdiss total × θ JA
where :
T A is the maximum ambient temperatur e
T J is the junction temperatur e ( ° C)
Pdiss total is the power dissipatio n of the MIC4103/4
θ JC is the thermal resistance from junction to ambient air ( ° C/W)
Propagation Delay and Delay Matching and other
Timing Considerations
Propagation delay and signal timing is an important
consideration in a high-performance power supply. The
MIC4103 is designed not only to minimize propagation
delay but to minimize the mismatch in delay between the
high-side and low-side drivers.
Fast propagation delay between the input and output drive
waveform is desirable. It improves overcurrent protection
by decreasing the response time between the control
signal and the MOSFET gate drive. Minimizing
propagation delay also minimizes phase shift errors in
power supplies with wide bandwidth control loops.
Many power supply topologies use two switching
MOSFETs operating 180 ° out of phase from each other.
These MOSFETs must not be on at the same time or a
short circuit will occur, causing high peak currents and
higher power dissipation in the MOSFETs. The MIC4103
and MIC4104 output gate drivers are not designed with
anti-shoot-through protection circuitry. The output drive
signals simply follow the inputs. The power supply design
must include timing delays (dead-time) between the input
signals to prevent shoot-through. The MIC4103 &
MIC4104 drivers specify delay matching between the two
drivers to help improve power supply performance by
reducing the amount of dead-time required between the
input signals.
Care must be taken to insure the input signal pulse width
is greater than the minimum specified pulse width. An
input signal that is less than the minimum pulse width may
result in no output pulse or an output pulse whose width is
significantly less than the input.
The maximum duty cycle (ratio of high side on-time to
switching period) is controlled by the minimum pulse width
of the low side and by the time required for the C B
capacitor to charge during the off-time. Adequate time
must be allowed for the C B capacitor to charge up before
the high-side driver is turned on.
MIC4103/4104
Decoupling and Bootstrap Capacitor Selection
Decoupling capacitors are required for both the low-side
(V DD ) and high-side (HB) supply pins. These capacitors
supply the charge necessary to drive the external
MOSFETs as well as minimize the voltage ripple on these
pins. The capacitor from HB to HS serves double duty by
providing decoupling for the high-side circuitry as well as
providing current to the high-side circuit while the high-side
external MOSFET is on. ceramic capacitors are
recommended because of their low impedance and small
size. Z5U type ceramic capacitor dielectrics are not
recommended due to the large change in capacitance over
temperature and voltage. A minimum value of 0.1μf is
required for each of the capacitors, regardless of the
MOSFETs being driven. Larger MOSFETs may require
larger capacitance values for proper operation. The
voltage rating of the capacitors depends on the supply
voltage, ambient temperature, and the voltage derating
used for reliability. 25V rated X5R or X7R ceramic
capacitors are recommended for most applications. The
minimum capacitance value should be increased if low-
voltage capacitors are used since even good quality
dielectric capacitors, such as X5R, will lose 40% to 70% of
their capacitance value at the rated voltage.
Placement of the decoupling capacitors is critical. The
bypass capacitor for V DD should be placed as close as
possible between the VDD and VSS pins. The bootstrap
capacitor (C B ) for the HB supply pin must be located as
close as possible between the HB and HS pins. The trace
connections must be short, wide, and direct. The use of a
ground plane to minimize connection impedance is
recommended. Refer to the section on layout and
component placement for more information.
The voltage on the bootstrap capacitor drops each time it
delivers charge to turn on the MOSFET. The voltage drop
depends on the gate charge required by the MOSFET.
Most MOSFET specifications specify gate charge vs. Vgs
voltage. Based on this information and a recommended
? V HB of less than 0.1V, the minimum value of bootstrap
capacitance is calculated as:
Q gate
Δ V HB
where : Q gate = Total Gate Charge at V HB
? HB = Voltage drop at the HB pin
The decoupling capacitor for the Vdd input may be
calculated with the same formula, however, the two
capacitors are usually equal in value.
November 2010
15
M9999-110910-B
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PDF描述 |
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| MIC4223YM | IC MOSFET DVR DUAL-INV 4A 8-SOIC |
| MIC4417YM4 TR | IC DRIVER MOSF LOW SIDE SOT143-4 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4103YM TR | 功能描述:功率驱动器IC 100V Half Bridge driver, 3/2A sink/Source Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4104 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:100V Half Bridge MOSFET Drivers 3/2A Sinking/Sourcing Current |
| MIC4104YM | 功能描述:功率驱动器IC 100V HalfBridge MOSFET Driver 3/2A SOURCE/SINK CURRENT TTL INPUT (Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4104YM TR | 功能描述:功率驱动器IC 100V HalfBridge MOSFET Driver 3/2A SOURCE/SINK CURRENT TTL INPUT (Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4104YML | 制造商:RF Micro Devices Inc 功能描述: |
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