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参数资料
| 型号： | MIC4123YME TR |
| 厂商： | Micrel Inc |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET 3A DUAL 8-SOIC |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 44ns |
| 电流 - 峰： | 3A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-SOIC-EP |
| 包装： | 带卷 (TR) |
| 其它名称： | MIC4123YMETR MIC4123YMETR-ND |
MIC4123/4124/4125
General Description
Micrel, Inc.
MIC4123/4124/4125
Dual 3A-Peak Low-Side MOSFET Driver
Bipolar/CMOS/DMOS Process
Features
The MIC4123/4124/4125 family are highly reliable BiC-
MOS/DMOS buffer/driver/MOSFET drivers. They are higher
output current versions of the MIC4126/4127/4128, which
are improved versions of the MIC4426/4427/4428. All three
families are pin-compatible. The MIC4123/4124/4125 driv-
ers are capable of giving reliable service in more demanding
electrical environments than their predecessors. They will
not latch under any conditions within their power and voltage
ratings. They can survive up to 5V of noise spiking, of either
polarity, on the ground pin. They can accept, without either
damage or logic upset, up to half an amp of reverse current
(either polarity) forced back into their outputs.
The MIC4123/4124/4125 series drivers are easier to use, more
?exible in operation, and more forgiving than other CMOS
or bipolar drivers currently available. Their BiCMOS/DMOS
construction dissipates minimum power and provides rail-to-
rail voltage swings.
Primarily intended for driving power MOSFETs, the
MIC4123/4124/4125 drivers are suitable for driving other loads
(capacitive, resistive, or inductive) which require low-imped-
ance, high peak currents, and fast switching times. Heavily
loaded clock lines, coaxial cables, or piezoelectric transducers
are some examples. The only known limitation on loading is
that total power dissipated in the driver must be kept within
the maximum power dissipation limits of the package.
Functional Diagram
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Reliable, low-power bipolar/CMOS/DMOS construction
Latch-up protected to >200mA reverse current
Logic input withstands swing to –5V
High 3A-peak output current
Wide 4.5V to 20V operating range
Drives 1800pF capacitance in 25ns
Short <50ns typical delay time
Delay times consistent with in supply voltage change
Matched rise and fall times
TTL logic input independent of supply voltage
Low equivalent 6pF input capacitance
Low supply current
3.5mA with logic-1 input
350μA with logic-0 input
Low 2.3Ω typical output impedance
Output voltage swings within 25mV of ground or V S .
‘426/7/8-, ‘1426/7/8-, ‘4426/7/8-compatible pinout
Inverting, noninverting, and differential con?gurations
Exposed backside pad packaging reduces heat
ePAD SOIC-8L (θ JA = 58°C/W)
4mm x 4mm MLF?-8L (θ JA = 45°C/W)
V S
0.1MA
0.6MA
INV ERT ING
Integrated Component Count:
4 Resistors
4 Capacitors
52 Transistors
OUTA
INA
2K ?
NONINV ERTING
0.6MA
INV ERT ING
0.1MA
OU TB
INB
2K ?
NONINV ERTING
GND
Ground Unused Inputs
Micrel, Inc. ? 2180 Fortune Drive ? San Jose, CA 95131 ? USA ? tel + 1 (408) 944-0800 ? fax + 1 (408) 474-1000 ? http://www.micrel.com
May 2005
1
M9999-052405
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相关代理商/技术参数 |
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| MIC4123YML | 制造商:Rochester Electronics LLC 功能描述: 制造商:RF Micro Devices Inc 功能描述: |
| MIC4123YML TR | 功能描述:功率驱动器IC Improved 3A Dual High Speed MOSFET Driver (Inverting) (Pb-Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4124 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Dual 3A-Peak Low-Side MOSFET Driver |
| MIC4124YME | 功能描述:功率驱动器IC Improved 3A Dual High Speed MOSFET Driver (Non-Inverting) (Pb-Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4124YME TR | 功能描述:功率驱动器IC Improved 3A Dual High Speed MOSFET Driver (Non-Inverting) (Pb-Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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