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| 型号： | MIC4225YM |
| 厂商： | Micrel Inc |
| 文件页数： | 10/20页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR INV-NON 4A 8-SOIC |
| 特色产品： | MIC4223/4/5 Low-Side MOSFET Drivers |
| 标准包装： | 95 |
| 配置： | 低端 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 25ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-3551-5 |
Micrel, Inc.
MIC4223/MIC4224/MIC4225
Application Information
Power Dissipation Considerations
Power dissipation in the driver can be separated into two
areas:
Output driver stage dissipation
Quiescent current dissipation used to supply the
internal logic and control functions.
Output Driver Stage Power Dissipation
Power dissipation in the driver’s output stage is mainly
caused by charging and discharging the gate to source
and gate to drain capacitance of the external MOSFET.
Figure 3 shows a simplified circuit of the MIC4223 driving
an external MOSFET.
Figure 4. MOSFET Gate Charge vs. V GS
The energy dissipated during turn-on is calculated as:
E = 1 2 × C iss × V GS
2
where C iss is the MOSFET' s total gate capacitanc e
but :
Q = C × V
so
E = 1/2 × Q G × V GS
An equivalent amount of energy is dissipated in the
Figure 3. Functional MOSFET/Driver Diagram
Dissipation Caused by Switching the External
MOSFET
Energy from capacitor C VDD is used to charge up the input
capacitance of the MOSFET (C GD and C GS ). The energy
delivered to the MOSFET is dissipated in the upper driver
MOSFET and Bipolar impedances. The effective
capacitance of C GD and C GS is difficult to calculate since
they vary non-linearly with I D , V GS , and V DS . Fortunately,
most power MOSFET specifications include a typical
graph of total gate charge vs. V GS . Figure 4 shows a
typical MOSFET gate charge curve. The graph illustrates
that for a gate voltage of 10V, the MOSFET requires about
23.5nC of charge.
driver’s sink circuit when the MOSFET turns off. The total
energy and power dissipated by the drive components is:
E DRIVER = Q G × V GS
and
P DRIVER = Q G × V GS × f S
Where:
E DRIVER is the energy dissipated per switching cycle
P DRIVER is the power dissipated by switching the
MOSFET on and off
Q G is the total Gate charge at V GS
V GS is the MOSFETs Gate to Source voltage
f S is the switching frequency of the Gate drive
circuit
June 2009
10
M9999-061109-A
(408) 944-0800
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4225YM TR | 功能描述:功率驱动器IC Dual 4A High Speed MOSFET Drivers with Enable RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4225YMME | 功能描述:功率驱动器IC Dual 4A High Speed MOSFET Drivers with Enable RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4225YMME TR | 功能描述:功率驱动器IC Dual 4A High Speed MOSFET Drivers with Enable RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4414 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:1.5A, 4.5V to 18V Low-Side MOSFET Driver |
| MIC4414YFT T5 | 功能描述:功率驱动器IC 4.5V to 18V Ultra-Small Low Side MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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