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| 型号： | MIC4225YM |
| 厂商： | Micrel Inc |
| 文件页数： | 11/20页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR INV-NON 4A 8-SOIC |
| 特色产品： | MIC4223/4/5 Low-Side MOSFET Drivers |
| 标准包装： | 95 |
| 配置： | 低端 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 25ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-3551-5 |
Micrel, Inc.
MIC4223/MIC4224/MIC4225
Quiescent Current Power Dissipation
Quiescent current powers the internal logic, level shifting
circuitry and bias for the output drivers. This current is
1.4
PDISS: GATE Charge
vs. Frequency
proportional to operating frequency and V DD voltage. The
typical characteristic graphs show how supply current
varies with switching frequency and supply voltage.
The power dissipated by the driver’s quiescent current is:
Pdiss quiescent = V DD × I DD
1.2
1.0
0.8
0.6
V DD =5V
50nC
40nC
30nC
20nC
Total Power Dissipation and Thermal Considerations
0.4
Total package power dissipation equals the power
0.2
10nC
dissipation of each driver caused by driving the external
MOSFETs plus the supply current.
0
100k
1M
10M
Pdiss TOTAL = Pdiss quiescent + Pdriver A + Pdriver B
The die temperature may be calculated once the total
power dissipation is known.
FREQUENCY (Hz)
Figure 5a. P DISS vs. Q G and f S for V DD = 5V
50nC
V DD =12V
T J = T A + Pdiss TOTAL × θ JA
Where:
T A is the Maximum ambient temperature
T J is the junction temperature (°C)
Pdiss TOTAL is the power dissipation of the Driver
θ JA is the thermal resistance from junction-to-
ambient air (°C/W)
The following graphs help determine the maximum gate
charge that can be driven with respect to switching
frequency, supply voltage and ambient temperature.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
PDISS: GATE Charge
vs. Frequency
40nC
30nC
20nC
10nC
Figure 5a shows the power dissipation in the driver for
different values of gate charge with V DD = 5V. Figure 5b
shows the power dissipation at V DD = 12V. Figure 5c show
0
100k
1M
FREQUENCY (Hz)
10M
the maximum power dissipation for a given ambient
temperature for the SOIC and ePAD MSOP packages.
The maximum operating frequency of the driver may be
limited by the maximum power dissipation of the driver
package.
Figure 5b. P DISS vs. Q G and f S for V DD = 12V
Maximum Power
Dissipation
2.0
1.5
1.0
0.5
0.0
20
40
60
80
100
120
140
Ambient Temperature (°C)
Figure 5c. Maximum P DISS vs. Ambient Temperature
June 2009
11
M9999-061109-A
(408) 944-0800
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相关代理商/技术参数 |
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|---|---|
| MIC4225YM TR | 功能描述:功率驱动器IC Dual 4A High Speed MOSFET Drivers with Enable RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4225YMME | 功能描述:功率驱动器IC Dual 4A High Speed MOSFET Drivers with Enable RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4225YMME TR | 功能描述:功率驱动器IC Dual 4A High Speed MOSFET Drivers with Enable RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4414 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:1.5A, 4.5V to 18V Low-Side MOSFET Driver |
| MIC4414YFT T5 | 功能描述:功率驱动器IC 4.5V to 18V Ultra-Small Low Side MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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