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| 型号： | MIC4417YM4 TR |
| 厂商： | Micrel Inc |
| 文件页数： | 8/10页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSF LOW SIDE SOT143-4 |
| 标准包装： | 1 |
| 系列： | IttyBitty® |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 42ns |
| 电流 - 峰： | 1.2A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-253-4，TO-253AA |
| 供应商设备封装： | SOT-143 |
| 包装： | 标准包装 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-1188-6 |
MIC4416/4417
Application Information
+15V
Micrel, Inc.
The MIC4416/7 is designed to provide high peak current for
charging and discharging capacitive loads. The 1.2A peak
value is a nominal value determined under specific condi-
* Gate enhancement voltage
+8V to +18V
4.7μF
Try a
15 ? , 15W
or
1k, 1/4W
resistor
tions. This nominal value is used to compare its relative size
to other low-side MOSFET drivers. The MIC4416/7 is not
0.1μF
3
MIC4416
VS G
2
Standard
MOSFET
designed to directly switch 1.2A continuous loads.
Supply Bypass
Logic
Input
4
CTL
GND
1
V GS *
IRFZ24 ?
Capacitors from VS to GND are recommended to control
switching and supply transients. Load current and supply
lead length are some of the factors that affect capacitor
size requirements.
A 4.7 μ F or 10 μ F tantalum capacitor is suitable for many
applications. Low-ESR (equivalent series resistance) metal-
ized film capacitors may also be suitable. An additional 0.1 μ F
ceramic capacitor is suggested in parallel with the larger
capacitor to control high-frequency transients.
The low ESR (equivalent series resistance) of tantalum
capacitors makes them especially effective, but also makes
them susceptible to uncontrolled inrush current from low
impedance voltage sources (such as NiCd batteries or auto-
matic test equipment). Avoid instantaneously applying volt-
? International Rectifier
100m ? , 60V MOSFET
Figure 1. Using a Standard MOSFET
Logic-Level MOSFET
Logic-level N-channel power MOSFETs are fully enhanced
with a gate-to-source voltage of approximately 5V and have
an absolute maximum gate-to-source voltage of ± 10V. They
are less common and generally more expensive.
The MIC4416/7 can drive a logic-level MOSFET if the supply
voltage, including transients, does not exceed the maximum
MOSFET gate-to-source rating (10V).
+5V
* Gate enhancement voltage
(must not exceed 10V)
Try a
age, capable of very high peak current, directly to or near
tantalum capacitors without additional current limiting. Nor-
mal power supply turn-on (slow rise time) or printed circuit
trace resistance is usually adequate for normal product
usage.
+4.5V to 10V*
4.7μF
0.1μF MIC4416
3
VS G
4
Logic CTL GND
2
1
V GS *
3 ? , 10W
or
100 ? , 1/4W
resistor
Logic-Level
MOSFET
IRLZ44 ?
Circuit Layout
Avoid long power supply and ground traces. They exhibit
inductance that can cause voltage transients (inductive kick).
Even with resistive loads, inductive transients can sometimes
exceed the ratings of the MOSFET and the driver.
When a load is switched off, supply lead inductance forces
current to continue flowing—resulting in a positive voltage
spike. Inductance in the ground (return) lead to the supply
has similar effects, except the voltage spike is negative.
Switching transitions momentarily draw current from VS to
GND. This combines with supply lead inductance to create
voltage transients at turn on and turnoff.
Input
? International Rectifier
28m ? , 60V MOSFET
Figure 2. Using a Logic-Level MOSFET
At low voltages, the MIC4416/7’s internal P- and N-channel
MOSFET’s on-resistance will increase and slow the output
rise time. Refer to “Typical Characteristics” graphs.
Inductive Loads
V SWITCHED
Transients can also result in slower apparent rise or fall times
when driver’s ground shifts with respect to the control input.
Minimize the length of supply and ground traces or use
V SUPPLY
4.7μF
0.1μF
MIC4416
Schottky
Diode
ground and power planes when possible. Bypass capacitors
3
VS
G
2
should be placed as close as practical to the driver.
MOSFET Selection
On
Off
4
CTL
GND
1
Standard MOSFET
A standard N-channel power MOSFET is fully enhanced with
a gate-to-source voltage of approximately 10V and has an
absolute maximum gate-to-source voltage of ± 20V.
The MIC4416/7’s on-state output is approximately equal to
the supply voltage. The lowest usable voltage depends upon
the behavior of the MOSFET.
Figure 3. Switching an Inductive Load
Switching off an inductive load in a low-side application forces
the MOSFET drain higher than the supply voltage (as the
inductor resists changes to current). To prevent exceeding
the MOSFET’s drain-to-gate and drain-to-source ratings, a
Schottky diode should be connected across the inductive
load.
MIC4416/4417
8
May 2005
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| MIC4422ZT | IC DRIVER MOSFET 9A LS TO-220-5 |
| MIC4424YWM | IC DRIVER MOSFET 3A DUAL 16-SOIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4420 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:6A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process |
| MIC4420_05 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:6A-Peak Low-Side MOSFET Driver |
| MIC4420_11 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:6A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process |
| MIC4420BM | 功能描述:IC DRIVER MOSFET 6A LOSIDE 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC4420BM TR | 功能描述:IC DRIVER MOSFET 6A LOSIDE 8SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
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