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参数资料
| 型号： | MIC4417YM4 TR |
| 厂商： | Micrel Inc |
| 文件页数： | 9/10页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSF LOW SIDE SOT143-4 |
| 标准包装： | 1 |
| 系列： | IttyBitty® |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 42ns |
| 电流 - 峰： | 1.2A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-253-4，TO-253AA |
| 供应商设备封装： | SOT-143 |
| 包装： | 标准包装 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-1188-6 |
MIC4416/4417
Power Dissipation
The maximum power dissipation must not be exceeded to
prevent die meltdown or deterioration.
Power dissipation in on/off switch applications is negligible.
Fast repetitive switching applications, such as SMPS (switch-
mode power supplies), cause a significant increase in power
dissipation with frequency. Power is dissipated each time
current passes through the internal output MOSFETs when
charging or discharging the external MOSFET. Power is also
dissipated during each transition when some current momen-
Micrel, Inc.
High-Frequency Operation
Although the MIC4416/7 driver will operate at frequencies
greater than 1MHz, the MOSFET’s capacitance and the load
will affect the output waveform (at the MOSFET’s drain).
For example, an MIC4416/IRL3103 test circuit using a 47 ?
5W load resistor will produce an output waveform that closely
matches the input signal shape up to about 500kHz. The
same test circuit with a 1k ? load resistor operates only up to
about 25kHz before the MOSFET source waveform shows
significant change.
tarily passes from VS to GND through both internal MOSFETs.
Slower rise time
observed at
+5V
Power dissipation is the product of supply voltage and supply
current:
1) P D = V S × I S
where:
MOSFET’s drain
+4.5V to 18V
4.7μF
0.1μF MIC4416
3 2
VS G
G
D
Compare
47k ? , 5W
to
1k ? , 1/4W
loads
Logic-Level
MOSFET
P D = power dissipation (W)
Logic
4
CTL
GND
1
S
IRL3103*
V S = supply voltage (V)
I S = supply current (A) [see paragraph below]
Supply current is a function of supply voltage, switching
frequency, and load capacitance. Determine this value from
the “Typical Characteristics: Supply Current vs. Frequency”
graph or measure it in the actual application.
Do not allow P D to exceed P D (max) , below.
T J (junction temperature) is the sum of T A (ambient tempera-
ture) and the temperature rise across the thermal resistance
of the package. In another form:
Input
* International Rectifier
14m ? , 30V MOSFET,
logic-level, V GS = ± 20V max.
Figure 5. MOSFET Capacitance Effects at High
Switching Frequency
When the MOSFET is driven off, the slower rise occurs
because the MOSFET’s output capacitance recharges through
the load resistance (RC circuit). A lower load resistance
allows the output to rise faster. For the fastest driver opera-
tion, choose the smallest power MOSFET that will safely
2)
P D ≤
150 ? T A
220
handle the desired voltage, current, and safety margin. The
smallest MOSFETs generally have the lowest capacitance.
where:
P D (max) = maximum power dissipation (W)
150 = absolute maximum junction temperature ( ° C)
T A = ambient temperature ( ° C) [68 ° F = 20 ° C]
220 = package thermal resistance ( ° C/W)
Maximum power dissipation at 20 ° C with the driver soldered
to a 0.25in 2 ground plane is approximately 600mW.
G
VS
PCB heat sink/
ground plane
GND
CTL
PCB traces
Figure 4. Heat-Sink Plane
The SOT-143 package θ JA (junction-to-ambient thermal re-
sistance) can be improved by using a heat sink larger than the
specified 0.25in 2 ground plane. Significant heat transfer
occurs through the large (GND) lead. This lead is an
extension of the paddle to which the die is attached.
May 2005
9
MIC4416/4417
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4420 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:6A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process |
| MIC4420_05 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:6A-Peak Low-Side MOSFET Driver |
| MIC4420_11 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:6A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process |
| MIC4420BM | 功能描述:IC DRIVER MOSFET 6A LOSIDE 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC4420BM TR | 功能描述:IC DRIVER MOSFET 6A LOSIDE 8SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
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