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| 型号： | MIC4420ZT |
| 厂商： | Micrel Inc |
| 文件页数： | 9/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET 6A LS TO-220-5 |
| 标准包装： | 50 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 18ns |
| 电流 - 峰： | 6A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-5 |
| 供应商设备封装： | TO-220-5 |
| 包装： | 管件 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-2315 MIC4420ZT-ND |
MIC4420/4429
Capacitive Load Power Dissipation
where:
Micrel, Inc.
Dissipation caused by a capacitive load is simply the en-
ergy placed in, or removed from, the load capacitance by
the driver. The energy stored in a capacitor is described
by the equation:
I H =
I L =
D =
V S =
quiescent current with input high
quiescent current with input low
fraction of time input is high (duty cycle)
power supply voltage
E = 1/2 C V 2
As this energy is lost in the driver each time the load is
charged or discharged, for power dissipation calculations
the 1/2 is removed. This equation also shows that it is
good practice not to place more voltage on the capacitor
than is necessary, as dissipation increases as the square
of the voltage applied to the capacitor. For a driver with a
capacitive load:
P L = f C (V S ) 2
where:
f = Operating Frequency
C = Load Capacitance
V S = Driver Supply Voltage
Inductive Load Power Dissipation
For inductive loads the situation is more complicated. For
the part of the cycle in which the driver is actively forcing
current into the inductor, the situation is the same as it is
in the resistive case:
P L1 = I 2 R O D
However, in this instance the R O required may be either
the on resistance of the driver when its output is in the high
state, or its on resistance when the driver is in the low state,
depending on how the inductor is connected, and this is
still only half the story. For the part of the cycle when the
inductor is forcing current through the driver, dissipation is
best described as
P L2 = I V D (1-D)
where V D is the forward drop of the clamp diode in the
driver (generally around 0.7V). The two parts of the load
dissipation must be summed in to produce P L
P L = P L1 + P L2
Quiescent Power Dissipation
Quiescent power dissipation (P Q , as described in the input
section) depends on whether the input is high or low. A low
input will result in a maximum current drain (per driver) of
≤0.2mA; a logic high will result in a current drain of ≤2.0mA.
Quiescent power can therefore be found from:
P Q = V S [D I H + (1-D) I L ]
Transition Power Dissipation
Transition power is dissipated in the driver each time its
output changes state, because during the transition, for a
very brief interval, both the N- and P-channel MOSFETs in
the output totem-pole are ON simultaneously, and a cur-
rent is conducted through them from V +S to ground. The
transition power dissipation is approximately:
P T = 2 f V S (A?s)
where (A?s) is a time-current factor derived from the typical
characteristic curves.
Total power (P D ) then, as previously described is:
P D = P L + P Q +P T
De?nitions
C L = Load Capacitance in Farads.
D = Duty Cycle expressed as the fraction of time the
input to the driver is high.
f = Operating Frequency of the driver in Hertz
I H = Power supply current drawn by a driver when both
inputs are high and neither output is loaded.
I L = Power supply current drawn by a driver when both
inputs are low and neither output is loaded.
I D = Output current from a driver in Amps.
P D = Total power dissipated in a driver in Watts.
P L = Power dissipated in the driver due to the driver ’s
load in Watts.
P Q = Power dissipated in a quiescent driver in
Watts.
P T = Power dissipated in a driver when the output
changes states (“shoot-through current”) in Watts.
NOTE: The “shoot-through” current from a dual
transition (once up, once down) for both drivers
is shown by the "Typical Characteristic Curve :
Crossover Area vs. Supply Voltage and is in am-
pere-seconds. This ?gure must be multiplied by
the number of repetitions per second (frequency)
to ?nd Watts.
R O = Output resistance of a driver in Ohms.
V S = Power supply voltage to the IC in Volts.
July 2005
9
M9999-072205
相关PDF资料 |
PDF描述 |
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| MIC4422AYN | IC DRIVER MOSFET 9A LS 8-DIP |
| MIC4422ZT | IC DRIVER MOSFET 9A LS TO-220-5 |
| MIC4424YWM | IC DRIVER MOSFET 3A DUAL 16-SOIC |
| MIC4427YM | IC DRIVER MOSFET DUAL 1.5A 8SOIC |
| MIC4451ZT | IC DRIVER MOSFET 12A HS TO220-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4421 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process |
| MIC4421_05 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:9A-Peak Low-Side MOSFET Driver |
| MIC4421_11 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process |
| MIC4421A | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:High peak-output current: 9A Peak (typ.) |
| MIC4421A_11 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:High peak-output current: 9A Peak (typ.) |
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