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| 型号： | MIC44F19YMME |
| 厂商： | Micrel Inc |
| 文件页数： | 11/17页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 6A HS 8-MSOP |
| 标准包装： | 100 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 15ns |
| 电流 - 峰： | 6A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 13.2 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽）裸露焊盘 |
| 供应商设备封装： | 8-MSOP-EP |
| 包装： | 管件 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-1502 |
Micrel, Inc.
Application Information
Power Dissipation Considerations
Power dissipation in the driver can be separated into two
areas:
MIC44F18/19/20
The energy dissipated by the resistive components of the
gate drive circuit during turn-on is calculated as:
E = 21 × Ciss × V GS 2
but
?
?
Output driver stage dissipation
Quiescent current dissipation used to supply the
Q = C × V
so
internal logic and control functions.
Output Driver Stage Power Dissipation
Power dissipation in the output driver stage is mainly
E = 1/2 × Qg × V GS
where
Ciss is the total gate capacitanc e of the MOSFET
caused by charging and discharging the gate to source
and gate to drain capacitance of the external MOSFET.
Figure 4 shows a simplified equivalent circuit of the
MIC44F18 driving an external MOSFET.
Figure 5. GATE Charge
Figure 4. Output Driver Stage Power Dissipation
Dissipation during the External MOSFET Turn-On
Energy from capacitor C VDD is used to charge up the input
capacitance of the MOSFET (C GD and C GS ). The energy
delivered to the MOSFET is dissipated in the three
resistive components, R ON , R G and R G_FET . R ON is the on
resistance of the upper driver MOSFET in the MIC44F18.
R G is the series resistor (if any) between the driver IC and
the MOSFET. R G_FET is the gate resistance of the
MOSFET. R G_FET is usually listed in the power MOSFET’s
specifications. The ESR of capacitor C B and the resistance
of the connecting etch can be ignored since they are much
less than R ON and R G_FET .
The effective capacitance of C GD and C GS is difficult to
calculate since they vary non-linearly with I D , V GS , and V DS .
Fortunately, most power MOSFET specifications include a
typical graph of total gate charge vs. V GS . Figure 5 shows
a typical gate charge curve for an arbitrary power
MOSFET. This illustrates that for a gate voltage of 10V,
the MOSFET requires about 23.5nC of charge.
The same energy is dissipated by R OFF , R G and R G_FET
when the driver IC turns the MOSFET off. Assuming Ron
is approximately equal to R OFF , the total energy and power
dissipated by the resistive drive elements is:
E DRIVER = Q G × V GS
and
P DRIVER = Q G × V GS × f S
Where
E DRIVER is the energy dissipated per switching
power
P DRIVER is the power dissipated by switching the
MOSFET on and off
Q G is the total GATE charge at V GS
V GS is the GATE to SOURCE voltage on the
MOSFET
f S is the switching frequency of the GATE drive
circuit
February 2011
11
M9999-020111
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相关代理商/技术参数 |
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| MIC44F19YMME TR | 功能描述:功率驱动器IC 3A High Speed MOSFET Driver (Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC44F20 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:6A, 13V High Speed MOSFET Drivers with Enable Input |
| MIC44F20YML | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:6A High Speed MOSFET Drivers |
| MIC44F20YML TR | 功能描述:功率驱动器IC 3A High Speed MOSFET Driver (Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC44F20YML-TR | 功能描述:IC MOSFET DVR HS SGL 6A 8-MLF 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:有效 驱动配置:低压侧 通道类型:单路 驱动器数:1 栅极类型:N 沟道 MOSFET 电压 - 电源:4.5 V ~ 13.2 V 逻辑电压?- VIL，VIH:1.607V，1.615V 电流 - 峰值输出（灌入，拉出）:6A，6A 输入类型:反相 高压侧电压 - 最大值（自举）:- 上升/下降时间（典型值）:10ns，10ns 工作温度:-40°C ~ 125°C （TJ） 安装类型:表面贴装 封装/外壳:8-VFDFN 裸露焊盘，8-MLF? 供应商器件封装:8-MLF?（2x2） 标准包装:1 |
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