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| 型号： | MIC44F19YMME |
| 厂商： | Micrel Inc |
| 文件页数： | 12/17页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 6A HS 8-MSOP |
| 标准包装： | 100 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 15ns |
| 电流 - 峰： | 6A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 13.2 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽）裸露焊盘 |
| 供应商设备封装： | 8-MSOP-EP |
| 包装： | 管件 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-1502 |
Micrel, Inc.
The power dissipated inside the MIC4100/4101 is equal to
the ratio of R ON & R OFF to the external resistive losses in
R G and R G_FET . Letting R ON = R OFF , the power dissipated in
the MIC44F18 due to driving the external MOSFET is:
MIC44F18/19/20
Figure 6A shows the power dissipation in the driver for
different values of gate charge with V DD =5V. Figure 6B
shows the power dissipation at V DD =12V. Figure 6C
show the maximum power dissipation for a given
ambient temperature for the MLF and ePad packages.
Pdiss drive = P DRIVER
R ON
R ON + R G + R G _ FET
The maximum operating frequency of the driver may
be limited by the maximum power dissipation of the
driver package.
Supply Current Power Dissipation
Power is dissipated in the MIC44F18 even if is there is
nothing being driven. The supply current is drawn by the
bias for the internal circuitry, the level shifting circuitry and
shoot-through current in the output drivers. The supply
current is proportional to operating frequency and the V DD
voltage. The typical characteristic graphs show how supply
current varies with switching frequency and supply voltage.
The power dissipated by the MIC44F18 due to supply
current is:
Pdiss SUPPLY = V DD × I DD
Total Power Dissipation and Thermal Considerations
Total power dissipation in the Driver equals the power
dissipation caused by driving the external MOSFETs plus
the supply current:
Pdiss TOTAL = Pdiss SUPPLY + Pdiss DRIVE
The die temperature may be calculated once the total
power dissipation is known:
T J = T A + Pdiss TOTAL × θ JA
Where
T A is the Maximum ambient temperature
T J is the junction temperature (°C)
Pdiss TOTAL is the power dissipation of the Driver
θ JC is the thermal resistance from junction-to-
ambient air (°C/W)
The following graphs help determine the maximum
gate charge that can be driven with respect to
switching frequency, supply voltage and ambient
temperature.
Figure 6A. Driver Power Dissipation
Figure 6B. Driver Power Dissipation
February 2011
12
M9999-020111
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| MIC4807BN | IC DRIVER 80V 8CH ADDRESS 18-DIP |
| MIC4811YMM | IC WHITE LED DVR HC 6CH 10MSOP |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC44F19YMME TR | 功能描述:功率驱动器IC 3A High Speed MOSFET Driver (Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC44F20 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:6A, 13V High Speed MOSFET Drivers with Enable Input |
| MIC44F20YML | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:6A High Speed MOSFET Drivers |
| MIC44F20YML TR | 功能描述:功率驱动器IC 3A High Speed MOSFET Driver (Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC44F20YML-TR | 功能描述:IC MOSFET DVR HS SGL 6A 8-MLF 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:有效 驱动配置:低压侧 通道类型:单路 驱动器数:1 栅极类型:N 沟道 MOSFET 电压 - 电源:4.5 V ~ 13.2 V 逻辑电压?- VIL，VIH:1.607V，1.615V 电流 - 峰值输出（灌入，拉出）:6A，6A 输入类型:反相 高压侧电压 - 最大值（自举）:- 上升/下降时间（典型值）:10ns，10ns 工作温度:-40°C ~ 125°C （TJ） 安装类型:表面贴装 封装/外壳:8-VFDFN 裸露焊盘，8-MLF? 供应商器件封装:8-MLF?（2x2） 标准包装:1 |
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