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参数资料
| 型号： | MIC5011BM TR |
| 厂商： | Micrel Inc |
| 文件页数： | 6/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSF HI/LOW SIDE 8SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端或低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 25µs |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.75 V ~ 32 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
| 其它名称： | MIC5011BMTR MIC5011BMTR-ND |
MIC5011
Micrel, Inc.
V GATE =V +5V
250
200
150
100
Charge Pump
Output Current
V GATE =V +
+
1.0
0.8
0.6
0.4
Charge Pump
Output Current
V GATE =V +
VGATE =V ++5V
VS=V –5V
50
0
0
5
10
15 20 25
+
30
0.2
0
0
5
10
C2=1 nF
VS=V + –5V
15 20 25
30
Block Diagram
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Ground
4
V+
1
C1 Com C2
8 7 6
CHARGE
PUMP
MIC5011
5 Gate
Input 2
LOGIC
500 ?
12.5V
3 Source
Applications Information
Functional Description (Refer to Block Diagram)
The MIC5011 functions are controlled via a logic block
connected to the input pin 2. When the input is low, all
functions are turned off for low standby current and the
gate of the power MOSFET is also held low through 500Ω
to an N-channel switch. When the input is taken above the
turn-on threshold (3.5V typical), the N-channel switch turns
off and the charge pump is turned on to charge the gate
of the power FET.
The charge pump incorporates a 100kHz oscillator and on-
chip pump capacitors capable of charging 1nF to 5V above
supply in 60μs typical. With the addition of 1nF capacitors
at C1 and C2, the turn-on time is reduced to 25μs typical
(see Figure 3). The charge pump is capable of pumping the
gate up to over twice the supply voltage. For this reason, a
zener clamp (12.5V typical) is provided between the gate
pin 5 and source pin 3 to prevent exceeding the V GS rating
of the MOSFET at high supplies.
MIC5011
6
July 2005
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC5011BN | 功能描述:IC DRIVER MOSF HI/LOW SIDE 8-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC5011YM | 功能描述:功率驱动器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC5011YM TR | 功能描述:功率驱动器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC5011YMTR | 制造商:Micrel Inc 功能描述: |
| MIC5011YN | 功能描述:功率驱动器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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