- 您现在的位置：买卖IC网 > Datasheet目录343 > MIC5013YN (Micrel Inc)IC DRIVER MOSFET HI/LO SIDE 8DIP Datasheet资料下载
参数资料
| 型号： | MIC5013YN |
| 厂商： | Micrel Inc |
| 文件页数： | 14/15页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET HI/LO SIDE 8DIP |
| 标准包装： | 50 |
| 配置： | 高端或低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 60µs |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 7 V ~ 32 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 1110 (CN2011-ZH PDF) |
| 其它名称： | 576-1232 |
V
MIC5013
Applications Information (Continued)
Gate Control Circuit
When applying the MIC5010, it is helpful to understand the
operation of the gate control circuitry (see Figure 14). The
gate circuitry can be divided into two sections: 1) charge
pump (oscillator, Q1-Q5, and the capacitors) and 2) gate
turn-off switch (Q6).
When the MIC5010 is in the OFF state, the oscillator is
turned off, thereby disabling the charge pump. Q5 is also
turned off, and Q6 is turned on. Q6 holds the gate pin (G)
at ground potential which effectively turns the external
MOSFET off.
Q6 is turned off when the MIC5013 is commanded on. Q5
pulls the gate up to supply (through 2 diodes). Next, the
charge pump begins supplying current to the gate. The
gate accepts charge until the gate-source voltage reaches
12.5V and is clamped by the zener diode.
A 2-output, three-phase clock switches Q1-Q4, providing a
quasi-tripling action. During the initial phase Q4 and Q2 are
ON. C1 is discharged, and C2 is charged to supply through
Micrel, Inc.
Q5. For the second phase Q4 turns off and Q3 turns on,
pushing pin C2 above supply (charge is dumped into the
gate). Q3 also charges C1. On the third phase Q2 turns
off and Q1 turns on, pushing the common point of the two
capacitors above supply. Some of the charge in C1 makes
its way to the gate. The sequence is repeated by turning
Q2 and Q4 back on, and Q1 and Q3 off.
In a low-side application operating on a 12 to 15V supply,
the MOSFET is fully enhanced by the action of Q5 alone.
On supplies of more than approximately 14V, current ?ows
directly from Q5 through the zener diode to ground. To
prevent excessive current ?ow, the MIC5010 supply should
be limited to 15V in low-side applications.
The action of Q5 makes the MIC5013 operate quickly in
low-side applications. In high-side applications Q5 pre-
charges the MOSFET gate to supply, leaving the charge
pump to carry the gate up to full enhancement 10V above
supply. Bootstrapped high-side drivers are as fast as low-
side drivers since the chip supply is boosted well above
the drain at turn-on.
+
C1
Q1
125pF
C1
Q3
COM
125pF
C2
C2
Q5
OFF
100 kHz
OSCILLATOR
Q2
Q4
500 ?
Q6
GATE CLAMP
ZENER
G
12.5V
ON
Figure 14. Gate Control
Circuit Detail
S
MIC5013
14
July 2005
相关PDF资料 |
PDF描述 |
|---|---|
| MIC5014YN | IC DRIVER MOSFET HI/LO SIDE 8DIP |
| MIC5016BWM | IC DRIVER MOSF DUAL HI/LO 16SOIC |
| MIC5018YM4 TR | IC DRIVER MOSFET HI SIDE SOT143 |
| MIC5020YM | IC DRIVER MOSF LO SIDE HS 8-SOIC |
| MIC5021YN | IC DRIVER MOSFET HI SIDE HS 8DIP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC5014 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Low-Cost High- or Low-Side MOSFET Driver |
| MIC5014_05 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Low-Cost High- or Low-Side MOSFET Driver |
| MIC5014-1 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Low-Cost High- or Low-Side MOSFET Driver Final Information |
| MIC5014BM | 功能描述:IC DRIVER MOSF HI/LO SIDE 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC5014BM TR | 功能描述:IC DRIVER MOSF HI/LO SIDE 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
发布紧急采购，3分钟左右您将得到回复。