参数资料
型号: MIC5020YM
厂商: Micrel Inc
文件页数: 7/8页
文件大小: 0K
描述: IC DRIVER MOSF LO SIDE HS 8-SOIC
标准包装: 95
配置: 低端
输入类型: 非反相
延迟时间: 400ns
配置数: 1
输出数: 1
电源电压: 11 V ~ 50 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
产品目录页面: 1110 (CN2011-ZH PDF)
其它名称: 576-1818-5
MIC5020YM-ND
10μF
2
7
2N3906
MIC5020
Faster MOSFET Switching
The MIC5020’s GATE current can be multiplied using a pair of
bipolar transistors to permit faster charging and discharging
of the external MOSFET’s gate.
+40V max.
2N3904
+11V to +50V MIC5020
1 8 N-Channel
V DD Gate Power MOSFET
(IRF540)
150kHz max. Input Sense-
3 6
Fault Sense+
4 5
C T Gnd
Micrel, Inc.
For test purposes, a 680Ω load resistor and 3Ω sense resistor
will produce an overcurrent condition when the load’s supply
(V+) is approximately 12V or greater.
Low-Temperature Operation
As the temperature of the MIC5020AJB (extended tempera-
ture range version—no longer available) approaches –55°C,
the driver’s off-state, gate-output offset from ground increases.
If the operating environment of the MIC5020AJB includes low
temperatures (–40°C to –55°C), add an external 2.2MΩ resis-
tor as shown in Figures 6a or 6b. This assures that the driver ’s
gate-to-source voltage is far below the external MOSFET’s
gate threshold voltage, forcing the MOSFET fully off.
V+
Figure 4. Faster MOSFET Switching Circuit
NPN and PNP transistors are used to respectively charge
and discharge the MOSFET gate. The MIC5020 gate current
is multiplied by the transistor β .
+11V to +50V
10μF
1
2
3
4
MIC5020
V DD Gate
Input Sense-
Fault Sense+
C T Gnd
8
7
6
5
2.2M
R S E NS E
The switched circuit voltage can be increased above 40V by
selecting transistors with higher ratings.
Remote Overcurrent Limiting Reset
In circuit breaker applications where the MIC5020 maintains
an off condition after an overcurrent condition is sensed, the
C T pin can be used to reset the MIC5020.
V+
Figure 6a. Gate-to-Source Pull Down
The gate-to-source con?guration (refer to Figure 6a) is ap-
propriate for resistive and inductive loads. This also causes
the smallest decrease in gate output voltage.
V+
10k to
2
3
Q1
MIC5020
3 6
2.2M R S E N S E
+11V to +50V
10μF
TTL input
Retry (H)
Maintained (L)
100k
74HC04
(example)
MIC5020
1
V DD Gate
Input Sense-
Fault Sense+
4
C T Gnd
2N3904
8
7
6
5
N-Channel
Power MOSFET
R S E N S E
+11V to +50V 1 8
V DD Gate
10μF 2 7
Input Sense-
Fault Sense+
4 5
C T Gnd
Figure 6b. Gate-to-Ground Pull Down
Figure 5. Remote Control Circuit
Switching Q1 on pulls C T low which keeps the MIC5020 GATE
output off when an overcurrent is sensed. Switching Q1 off
causes C T to appear open. The MIC5020 retries in about
20μs and continues to retry until the overcurrent condition
is removed.
The gate-to-ground con?guration (refer to Figure 6b) is ap-
propriate for resistive, inductive, or capacitive loads. This
con?guration will decrease the gate output voltage slightly
more than the circuit shown in Figure 6a.
July 2005
7
MIC5020
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