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参数资料
| 型号： | MJ11022 |
| 厂商： | MOSPEC SEMICONDUCTOR CORP. |
| 英文描述： | POWER TRANSISTORS(15A,150-250V,175W) |
| 中文描述： | 功率晶体管（第15A ,150 - 250V，175W的） |
| 文件页数： | 1/6页 |
| 文件大小： | 235K |
| 代理商： | MJ11022 |
1
Motorola Bipolar Power Transistor Device Data
"
!
. . . designed for use as general purpose amplifiers, low frequency switching and
motor control applications.
High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types)
Collector–Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) – MJ11018, 17
VCEO(sus)
= 250 Vdc (Min) – MJ11022, 21
Low Collector–Emitter Saturation
VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A
VCE(sat)
= 1.8 V (Typ) @ IC = 10 A
100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.
Rating
Collector–Emitter Voltage
Symbol
VCEO
MJ11017
150
MJ11021
250
Unit
Vdc
Derate Above 25 C
175
Watts
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (
°
C)
50
75
100
125
200
200
50
P
100
0
150
175
25
0
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ11017/D
30 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60–120 VOLTS
200 WATTS
*Motorola Preferred Device
CASE 1–07
TO–204AA
(TO–3)
相关PDF资料 |
PDF描述 |
|---|---|
| MJ11030 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS |
| MJ11032 | Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators |
| MJ11032 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| MJ11030 | 4 Pin, MFP, Pin Pitch 1.27mm, Photdarlington Detector, CTR 600 min @ 1mA, 2V Optocoupler |
| MJ11028 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ11022G | 功能描述:达林顿晶体管 BIP T03 NPN 15A 250V RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJ11022G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| MJ11028 | 功能描述:达林顿晶体管 50A 60V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJ11028 | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR DARLINGTON TO-3 |
| MJ11028_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High−Current Complementary Silicon Power Transistors |
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