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参数资料
| 型号： | MJ14002 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSITORS |
| 中文描述： | 60 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | CASE 197A-05, TO-3, TO-204, 2 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 241K |
| 代理商： | MJ14002 |
1
Motorola Bipolar Power Transistor Device Data
# " " %
$ !!" !
. . . designed for use in high–power amplifier and switching circuit applications,
High Current Capability — IC Continuous = 60 Amperes
DC Current Gain — hFE = 15–100 @ IC = 50 Adc
Low Collector–Emitter Saturation Voltage —
Collector–Emitter Voltage
MJ14001
60
MJ14003
80
Vdc
Collector Base Voltage
60
80
Vdc
Emitter–Base Voltage
5
Vdc
Collector Current — Continuous
60
Adc
Base Current — Continuous
15
Adc
Emitter Current — Continuous
75
300
Watts
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (
°
C)
40
80
120
240
360
330
90
P
210
0
160
200
0
30
270
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ14001/D
*Motorola Preferred Device
60 AMPERES
COMPLEMENTARY
SILICON
POWER TRANSITORS
60–80 VOLTS
300 WATTS
CASE 197A–05
TO–204AE (TO–3)
REV 2
相关PDF资料 |
PDF描述 |
|---|---|
| MJ14003 | COMPLEMENTARY SILICON POWER TRANSITORS |
| MJ14002 | 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS |
| MJ14003 | 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS |
| MJ14002 | MJ14002 |
| MJ16010 | 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ14002G | 功能描述:两极晶体管 - BJT 60A 80V 300W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ14002G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| MJ14003 | 功能描述:两极晶体管 - BJT 60A 80V 300W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ14003G | 功能描述:两极晶体管 - BJT 60A 80V 300W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ-142 | 制造商:Amphenol Aerospace 功能描述:MICROPHONE JACK 制造商:Amphenol Nexus 功能描述:CNX JACK - Bulk |
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