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参数资料
| 型号： | MJ14002 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSITORS |
| 中文描述： | 60 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | CASE 197A-05, TO-3, TO-204, 2 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 241K |
| 代理商： | MJ14002 |
3
Motorola Bipolar Power Transistor Device Data
V
V
300
200
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
0.7 1.0
2.0
3.0
20
30
20
h
VCE = 3.0 V
100
70
50
7.0
5.0
5.0
10
3.0
10
Figure 4. DC Current Gain
2.8
0.1
IB, BASE CURRENT (AMPS)
Figure 5. Collector Saturation Region
1.0
10
TJ = 25
°
C
5.0
3.0
2.0
0.5
2.0
1.2
0.8
0.4
7.0
30
50
70
0
1.6
2.4
7.0
0.7
0.3
0.2
300
200
IC, COLLECTOR CURRENT (AMPS)
0.7 1.0
2.0
3.0
20
30
20
h
100
70
50
7.0
5.0
5.0
10
3.0
10
Figure 6. Collector Saturation Region
2.8
0.1
IB, BASE CURRENT (AMPS)
1.0
10
5.0
3.0
2.0
0.5
2.0
1.2
0.8
0.4
7.0
30
50
70
0
1.6
2.4
7.0
0.7
0.3
0.2
IC = 60 A
TJ = 25
°
C
NPN
MJ14002
PNP
MJ14001, MJ14003
2.8
0.7
IC, COLLECTOR CURRENT (AMPS)
Figure 7. “On” Voltages
10
V
TJ = 25
°
C
50
30
20
5.0
2.0
1.2
0.8
0.4
0
1.6
2.4
70
7.0
2.0
1.0
VBE(sat) @ IC/IB = 10
3.0
VBE(on) @ VCE = 3.0 V
VCE(sat) @ IC/IB = 10
2.8
0.7
IC, COLLECTOR CURRENT (AMPS)
Figure 8. “On” Voltages
10
V
TJ = 25
°
C
50
30
20
5.0
2.0
1.2
0.8
0.4
0
1.6
2.4
70
7.0
2.0
1.0
3.0
TJ = –55
°
C
TJ = 25
°
C
TJ = 150
°
C
VCE = 3.0 V
TJ = –55
°
C
TJ = 25
°
C
TJ = 150
°
C
IC = 25 A
IC = 10 A
IC = 60 A
IC = 25 A
IC = 10 A
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 3.0 V
VCE(sat) @ IC/IB = 10
TYPICAL ELECTRICAL CHARACTERISTICS
相关PDF资料 |
PDF描述 |
|---|---|
| MJ14003 | COMPLEMENTARY SILICON POWER TRANSITORS |
| MJ14002 | 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS |
| MJ14003 | 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS |
| MJ14002 | MJ14002 |
| MJ16010 | 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ14002G | 功能描述:两极晶体管 - BJT 60A 80V 300W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ14002G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| MJ14003 | 功能描述:两极晶体管 - BJT 60A 80V 300W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ14003G | 功能描述:两极晶体管 - BJT 60A 80V 300W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ-142 | 制造商:Amphenol Aerospace 功能描述:MICROPHONE JACK 制造商:Amphenol Nexus 功能描述:CNX JACK - Bulk |
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