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参数资料
| 型号： | MJ16012 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS |
| 中文描述： | 15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件页数： | 6/10页 |
| 文件大小： | 548K |
| 代理商： | MJ16012 |
6
Motorola Bipolar Power Transistor Device Data
I
Figure 13. Inductive Switching Measurements
Figure 14. Peak Reverse Base Current
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
0
5
TIME
IC
VCE
90% IB1
tsv
IC(pk)
VCE(pk)
90% VCE(pk)
90% IC(pk)
tfi
10% VCE(pk)
10%
IC(pk)
2% IC
4
3
2
IB1 = 2.0 A
1.0 A
0
1.0
2.0
3.0
5.0
IC = 10 A
TC = 25
°
C
1
10
9
8
7
6
4.0
IB
trv
tti
tc
GUARANTEED SAFE OPERATING AREA LIMITS
I
20
5.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.02
10
450
5.0
2.0
1.0
10
0.5
0.1
0.05
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
20
50
100
200 300
Figure 15. Maximum Forward Bias
Safe Operating Area
TC = 25
°
C
10
μ
s
1.0 ms
dc
MJW16010,12
MJ16010/12
20
VCE(pk), PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS)
0
100
350
18
10
6.0
200
450
850
Figure 16. Maximum Reverse Bias
Safe Operating Area
β
f*
≥
4.0
TC
≤
100
°
C
700
VBE(off) = 0 V
1.0 to 5.0 V
,
I
2.0
14
150
250
600
30
70
*
β
f =
IC
IB1
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 15 is based on TC = 25 C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
≥
25 C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 15 may be found at any case tem-
perature by using the appropriate curve on Figure 18.
TJ(pk) may be calculated from the data in Figure 17. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base–to–emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage current condition allowable dur-
ing reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 16 gives the RBSOA character-
istics.
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