- 您现在的位置：买卖IC网 > PDF目录378671 > MJW16018 (MOTOROLA INC) POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS PDF资料下载
参数资料
| 型号： | MJW16018 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS |
| 中文描述： | 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE |
| 文件页数： | 1/8页 |
| 文件大小： | 366K |
| 代理商： | MJW16018 |
1
Motorola Bipolar Power Transistor Device Data
1.5 kV SWITCHMODE Series
These transistors are designed for high–voltage, high–speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for
line–operated switchmode applications.
Typical Applications:
Features:
Switching Regulators
Collector–Emitter Voltage — VCEV = 1500 Vdc
Inverters
Fast Turn–Off Times
Solenoids
80 ns Inductive Fall Time — 100 C (Typ)
Relay Drivers
110 ns Inductive Crossover Time — 100 C (Typ)
Motor Controls
4.5
μ
s Inductive Storage Time — 100 C (Typ)
Deflection Circuits
100 C Performance Specified for:
Reverse–Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
— Peak(1)
IBM
12
Total Power Dissipation
Derate above TC = 25 C
PD
1
Operating and Storage Junction
TJ, Tstg
–65 to 200
1
–55 to 150
W/ C
THERMAL CHARACTERISTICS
C
Characteristic
Symbol
Thermal Resistance, Junction to Case
Lead Temperature for Soldering
TL
Max
R
θ
JC
1
275
Unit
C/W
1
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ16018/D
POWER TRANSISTORS
10 AMPERES
800 VOLTS
125 AND 175 WATTS
*Motorola Preferred Device
CASE 1–07
TO–204AA
MJ16018
CASE 340F–03
TO–247AE
MJW16018
REV 1
相关PDF资料 |
PDF描述 |
|---|---|
| MJ16020 | NPN SILICON POWER TRANSISTOR 30 AMPERES 450 VOLTS |
| MJ16020 | NPN SILICON POWER TRANSISTOR |
| MJ16022 | NPN SILICON POWER TRANSISTOR |
| MJ16022 | NPN SILICON POWER TRANSISTOR 30 AMPERES 450 VOLTS |
| MJE1123 | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:2; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJW16110 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN Silicon Power Transistors |
| MJW16206 | 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 500V 12A 3-Pin(3+Tab) TO-247AE 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MJW16212 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MJW18020 | 功能描述:两极晶体管 - BJT 20A 450V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJW18020_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN Silicon Power Transistors High Voltage Planar |
发布紧急采购，3分钟左右您将得到回复。