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参数资料
| 型号： | MJE1123 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:2; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight |
| 中文描述： | 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 文件页数： | 1/6页 |
| 文件大小： | 116K |
| 代理商： | MJE1123 |
1
Motorola Bipolar Power Transistor Device Data
The MJE1123 is an applications specific device designed to provide low–dropout
linear regulation for switching–regulator post regulators, battery powered systems
and other applications. The MJE1123 is fully specified in the saturation region and
exhibits the following main features:
High Gain Limits Base–Drive Losses to only 1–2% of Circuit Output Current
Gain is 100 Minimum at IC = 1.0 Amp, VCE = 7.0 Volts
Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp
MAXIMUM RATINGS
(TC = 25
°
C Unless Otherwise Noted.)
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
VCEO
VCB
VEB
IC
ICM
40
Vdc
Collector–Base Voltage
50
Vdc
Emitter–Base Voltage
5.0
Vdc
Collector Current — Continuous
Collector Current
— Peak
4.0
8.0
Adc
Base Current — Continuous
IB
PD
4.0
Adc
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
75
0.6
Watts
W/
°
C
Operating and Storage Temperature
TJ, Tstg
– 65 to +150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
°
Thermal Resistance
— Junction to Ambient
°
R
θ
JC
R
θ
JA
TL
°
1.67
°
°
70
°
°
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8
″
from Case for 5 seconds
275
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C Unless Otherwise Noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS*
Collector–Emitter Sustaining Voltage (IC = 1.0 mA, I = 0)
Emitter–Base Voltage (IE = 100
μ
A)
Collector Cutoff Current
(VCE = 7.0 Vdc, IB = 0)
(VCE = 20 Vdc, IB = 0)
VCEO(sus)
VEBO
ICEO
40
65
—
Vdc
7.0
11
—
Vdc
—
—
—
—
100
250
μ
Adc
ON CHARACTERISTICS*
Collector–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 20 mAdc)
(IC = 1.0 Adc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 120 mAdc)
(IC = 2.0 Adc, IB = 50 mAdc)
(IC = 2.0 Adc, IB = 120 mAdc)
(IC = 4.0 Adc, IB = 120 mAdc)
* Indicates Pulse Test: Pulse Width = 300
μ
s max, Duty Cycle = 2%.
VCE(sat)
—
—
—
—
—
—
0.16
0.13
0.10
0.25
0.20
0.45
0.30
0.25
0.20
0.40
0.35
0.75
Vdc
(continued)
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE1123/D
PNP LOW DROPOUT
TRANSISTOR
4.0 AMPERES
40 VOLTS
CASE 221A–06
TO–220AB
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相关代理商/技术参数 |
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|---|---|
| MJE12007 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
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| MJE127 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:COMPLEMENTARY SILICON POWER DARLINGTONS |
| MJE-12B | 制造商:TALEMA 制造商全称:TALEMA 功能描述:T1/E1/CEPT/ISDN-PRI SMD Transformers |
| MJE13001 | 制造商:TGS 制造商全称:Tiger Electronic Co.,Ltd 功能描述:TO-92 Plastic-Encapsulate Transistors (NPN) |
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