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参数资料
| 型号： | MJE1123 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:2; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight |
| 中文描述： | 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 文件页数： | 2/6页 |
| 文件大小： | 116K |
| 代理商： | MJE1123 |
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C Unless Otherwise Noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS* (continued)
Base–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 20 mAdc)
(IC = 2.0 Adc, IB = 50 mAdc)
(IC = 4.0 Adc, IB = 120 mAdc)
DC Current Gain
(IC = 1.0 Adc, VCE = 7.0 Vdc)
(IC = 1.0 Adc, VCE = 10 Vdc)
(IC = 2.0 Adc, VCE = 7.0 Vdc)
(IC = 2.0 Adc, VCE = 10 Vdc)
(IC = 4.0 Adc, VCE = 7.0 Vdc)
(IC = 4.0 Adc, VCE = 10 Vdc)
Base–Emitter On Voltage
(IC = 1.0 Adc, VCE = 1.0 Vdc)
(IC = 2.0 Adc, VCE = 1.0 Vdc)
(IC = 4.0 Adc, VCE = 1.0 Vdc)
DYNAMIC CHARACTERISTICS
VBE(sat)
—
—
—
0.77
0.87
1.00
0.95
1.20
1.40
Vdc
hFE
100
100
75
80
45
45
170
180
120
140
75
79
225
225
170
180
100
100
—
VBE(on)
—
—
—
0.75
0.84
0.90
0.90
1.00
1.20
Vdc
Current–Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
* Indicates Pulse Test: Pulse Width = 300
μ
s max, Duty Cycle = 2%.
fT
5.0
11.5
—
MHz
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Saturation Voltage versus Collector
Current as a Function of Base Drive
V
20
40
60
80
100
TJ, CASE TEMPERATURE (
°
C)
Figure 2. Saturation Voltage
versus Temperature
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Base–Emitter Saturation Voltage
V
S
20
40
60
80
100
TJ, CASE TEMPERATURE (
°
C)
Figure 4. Base–Emitter Saturation Voltage
versus Temperature
V
S
C
S
V
S
100
10
1
0.1
1
0.8
0.6
0.4
0.2
0
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.1
1
0.9
0.8
0.7
0.6
TJ = 25
°
C
TJ = 25
°
C
IB = 20 mA
50 mA
100 mA
120 mA
IC = 4 A, IB = 100 mA
IC = 2 A, IB = 50 mA
IC = 1 A, IB = 20 mA
IB = 20 mA
50 mA
120 mA
IC = 4 A, IB = 100 mA
IC = 2 A, IB = 50 mA
IC = 1 A, IB = 20 mA
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