- 您现在的位置：买卖IC网 > PDF目录378671 > MJE5740 (MOTOROLA INC) POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS PDF资料下载
参数资料
| 型号： | MJE5740 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS |
| 中文描述： | 8 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 文件页数： | 1/6页 |
| 文件大小： | 216K |
| 代理商： | MJE5740 |
1
Motorola Bipolar Power Transistor Device Data
The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power
switching in inductive circuits. They are particularly suited for operation in applications
such as:
Small Engine Ignition
Switching Regulators
Inverters
Emitter Base Voltage
Collector Current — Continuous
Total Power Dissipation
@ TA = 25 C
IC
8
8
Vdc
Adc
2
Watts
@ TC = 25 C
80
Watts
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
θ
JA
Max
1.56
Unit
C/W
Characteristic
OFF CHARACTERISTICS (2)
Collector–Emitter Sustaining Voltage
MJE5740
MJE5742
Symbol
VCEO(sus)
Min
300
400
Typ
—
—
Max
—
—
Unit
Vdc
—
—
1
mAdc
(2) Pulse Test: Pulse Width = 300
s, Duty Cycle = 2%.
(continued)
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE5740/D
POWER DARLINGTON
TRANSISTORS
8 AMPERES
300, 350, 400 VOLTS
80 WATTS
*Motorola Preferred Device
≈
100
≈
50
CASE 221A–06
REV 1
相关PDF资料 |
PDF描述 |
|---|---|
| MJE5740 | POWER DARLINGTON TRANSISTORS |
| MJE5741 | POWER DARLINGTON TRANSISTORS |
| MJE5742 | POWER DARLINGTON TRANSISTORS |
| MJE5741 | POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS |
| MJE5742 | POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE5740_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS |
| MJE5740G | 功能描述:达林顿晶体管 8A 300V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE5741 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:POWER DARLINGTON TRANSISTORS |
| MJE5742 | 功能描述:达林顿晶体管 8A 400V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE5742G | 功能描述:达林顿晶体管 8A 400V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。