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参数资料
| 型号： | MJE5741 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER DARLINGTON TRANSISTORS |
| 中文描述： | 8 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | PLASTIC, CASE 221A-06, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 216K |
| 代理商： | MJE5741 |
1
Motorola Bipolar Power Transistor Device Data
The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power
switching in inductive circuits. They are particularly suited for operation in applications
such as:
Small Engine Ignition
Switching Regulators
Inverters
Emitter Base Voltage
Collector Current — Continuous
Total Power Dissipation
@ TA = 25 C
IC
8
8
Vdc
Adc
2
Watts
@ TC = 25 C
80
Watts
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
θ
JA
Max
1.56
Unit
C/W
Characteristic
OFF CHARACTERISTICS (2)
Collector–Emitter Sustaining Voltage
MJE5740
MJE5742
Symbol
VCEO(sus)
Min
300
400
Typ
—
—
Max
—
—
Unit
Vdc
—
—
1
mAdc
(2) Pulse Test: Pulse Width = 300
s, Duty Cycle = 2%.
(continued)
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE5740/D
POWER DARLINGTON
TRANSISTORS
8 AMPERES
300, 350, 400 VOLTS
80 WATTS
*Motorola Preferred Device
≈
100
≈
50
CASE 221A–06
REV 1
相关PDF资料 |
PDF描述 |
|---|---|
| MJE5742 | POWER DARLINGTON TRANSISTORS |
| MJE5741 | POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS |
| MJE5742 | POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS |
| MJE5850 | 8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS |
| MJE5850 | PNP SILICON POWER TRANSISTORS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE5742 | 功能描述:达林顿晶体管 8A 400V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE5742G | 功能描述:达林顿晶体管 8A 400V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE5850 | 功能描述:两极晶体管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE5850_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS |
| MJE5850G | 功能描述:两极晶体管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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