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参数资料
| 型号： | MJE5741 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER DARLINGTON TRANSISTORS |
| 中文描述： | 8 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | PLASTIC, CASE 221A-06, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 216K |
| 代理商： | MJE5741 |
2
Motorola Bipolar Power Transistor Device Data
DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)
(IC = 4 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 4 Adc, IB = 0.2 Adc, TC = 100 C)
Base–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Base–Emitter Saturation Voltage
Diode Forward Voltage (2) (IF = 5 Adc)
SWITCHING CHARACTERISTICS
Typical Resistive Load (Table 1)
Fall Time
Inductive Load, Clamped (Table 1)
(2) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the
(2)
Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
200
—
VBE(sat)
400
—
—
—
—
—
2.2
2.5
2.4
2.5
—
—
—
Vdc
Vf
Vdc
IB1 = IB2 = 0.25 A, tp = 25
μ
s,
tr
—
—
0.5
2
—
—
μ
s
μ
s
(IC(pk) = 6 A, VCE(pk) = 250 Vdc
V
trv
IC
VCE
IB
90% IB1
tsv
IC(pk)
VCE(pk)
90% VCE(pk)
90% IC
tfi
10% VCE(pk)
10%
IC(pk)
2% IC
tti
tc
0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
5
2000
h
VCE = 5 V
1
+25
°
C
2
10
1000
100
10
0
TC, CASE TEMPERATURE (
°
C)
Figure 1. Power Derating
0
40
120
160
60
P
SECOND BREAKDOWN DERATING
100
80
40
20
60
100
140
80
THERMAL DERATING
Figure 2. Inductive Switching Measurements
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Base–Emitter Voltage
2.4
1.6
0.4
2
1.2
0.8
hFE = 20
0.2
10
2
0.5
1
5
TIME
150
°
C
–55
°
C
20
2.2
1.4
1.8
1
0.6
+150
°
C
+25
°
C
–55
°
C
TYPICAL CHARACTERISTICS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE5742 | 功能描述:达林顿晶体管 8A 400V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE5742G | 功能描述:达林顿晶体管 8A 400V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE5850 | 功能描述:两极晶体管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE5850_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS |
| MJE5850G | 功能描述:两极晶体管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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