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参数资料
| 型号： | MJE5741 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER DARLINGTON TRANSISTORS |
| 中文描述： | 8 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | PLASTIC, CASE 221A-06, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 216K |
| 代理商： | MJE5741 |
3
Motorola Bipolar Power Transistor Device Data
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE
SWITCHING
OUTPUT WAVEFORMS
T
C
V
T
NOTE:
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
PW
DUTY CYCLE
≤
10%
tr, tf
≤
10 ns
68
1 k
0.001
μ
F
0.02
μ
F
1N4933
270
+5 V
1 k
2N2905
47
1/2 W
100
–VBE(off)
MJE200
T.U.T.
IB
RB
1N4933
1N4933
33
33
2N2222
1 k
MJE210
VCC
+5 V
L
IC
MR826*
Vclamp
*SELECTED FOR
≥
1 kV
VCE
5.1 k
51
+VCC
RC
SCOPE
–4 V
D1
RB
TUT
COIL DATA:
FERROXCUBE CORE #6656
FULL BOBBIN (~16 TURNS) #16
GAP FOR 200
μ
H/20 A
Lcoil = 200
μ
H
VCC = 30 V
VCE(pk) = 250 Vdc
IC(pk) = 6 A
VCC = 250 V
D1 = 1N5820 OR EQUIV.
IC
VCE
IC(pk)
t1
tf
t
t
t2
TIME
VCEOR
Vclamp
tf CLAMPED
t1 ADJUSTED TO
OBTAIN IC
Lcoil (ICpk)
t1
≈
VCC
t2
≈
Lcoil (ICpk)
Vclamp
TEST EQUIPMENT
SCOPE–TEKTRONICS
475 OR EQUIVALENT
+10 V
25
μ
s
0
–9.2 V
tr, tf < 10 ns
DUTY CYCLE = 1%
RB AND RC ADJUSTED
FOR DESIRED IB AND IC
Table 1. Test Conditions for Dynamic Performance
V
Figure 5. Inductive Switching Measurements
IC, COLLECTOR CURRENT (AMPS)
1
0.2
0.1
1.4
0.8
1.2
10
5
2
1
0.5
0.2
1.6
1.8
0.6
0.4
hFE = 20
+25
°
C
+150
°
C
–55
°
C
相关PDF资料 |
PDF描述 |
|---|---|
| MJE5742 | POWER DARLINGTON TRANSISTORS |
| MJE5741 | POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS |
| MJE5742 | POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS |
| MJE5850 | 8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS |
| MJE5850 | PNP SILICON POWER TRANSISTORS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE5742 | 功能描述:达林顿晶体管 8A 400V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE5742G | 功能描述:达林顿晶体管 8A 400V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE5850 | 功能描述:两极晶体管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE5850_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS |
| MJE5850G | 功能描述:两极晶体管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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