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参数资料
| 型号： | MJE5741 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER DARLINGTON TRANSISTORS |
| 中文描述： | 8 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | PLASTIC, CASE 221A-06, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 216K |
| 代理商： | MJE5741 |
4
Motorola Bipolar Power Transistor Device Data
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 6 is based on TC = 25 C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
≥
25 C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 6 may be found at any case tem-
perature by using the appropriate curve on Figure 1.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable dur-
ing reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives the complete RBSOA
characteristics.
The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.
I
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. Forward Bias Safe Operating Area
Figure 7. Reverse Bias Safe Operating Area
16
14
12
8
0
2
4
10
100
200
300
500
0
400
16
10
8
5
1
0.02
100
I
0.1
10
20
200
400
3
0.5
0.3
50
0.05
dc
1 ms
100
μ
s
MJE5742
MJE5741
MJE5740
VBE(off)
≤
5 V
TJ = 100
°
C
6
CURVES APPLY BELOW RATED VCEO
10
μ
s
MJE5742
MJE5741
MJE5740
5 ms
BONDING WIRE LIMIT
THERMAL LIMIT
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
t
μ
t
μ
IC, COLLECTOR CURRENT (AMPS)
0.5 0.7
1
2
10
7
5
2
1
0.7
0.5
0.2
0.3
5
10
3
3
0.3
0.2
7
IC, COLLECTOR CURRENT (AMPS)
0.5 0.7
1
2
10
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.3
Figure 8. Turn–On Time
5
1
Figure 9. Turn–Off Time
3
VCC = 250 V
IB1 = IB2
IC/IB = 20
ts
tr
tf
td
VCC = 250 V
IB1 = IB2
IC/IB = 20
0.3
0.03
0.2
7
RESISTIVE SWITCHING PERFORMANCE
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PDF描述 |
|---|---|
| MJE5742 | POWER DARLINGTON TRANSISTORS |
| MJE5741 | POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS |
| MJE5742 | POWER DARLINGTON TRANSISTORS 8 AMPERES 300- 350- 400 VOLTS 80 WATTS |
| MJE5850 | 8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS |
| MJE5850 | PNP SILICON POWER TRANSISTORS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE5742 | 功能描述:达林顿晶体管 8A 400V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE5742G | 功能描述:达林顿晶体管 8A 400V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE5850 | 功能描述:两极晶体管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE5850_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS |
| MJE5850G | 功能描述:两极晶体管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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