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参数资料
| 型号： | MJE270 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS |
| 中文描述： | 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-225AA |
| 文件页数： | 1/4页 |
| 文件大小： | 109K |
| 代理商： | MJE270 |
1
Motorola Bipolar Power Transistor Device Data
. . . designed specifically for use with the MC3419 Solid–State Subscriber Loop
Interface Circuit (SLIC).
High Safe Operating Area
IS/B @ 40 V, 1.0 s = 0.375 A — TO–126
Collector–Emitter Sustaining Voltage
VCEO(sus) = 100 Vdc (Min)
High DC Current Gain
hFE @ 120 mA, 10 V = 1500 (Min)
Derate above 25 C
0.12
W/ C
1.5
Watts
Operating and Storage Junction Temperature Range
TJ, Tstg
–65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R
θ
JC
R
θ
JA
Max
8.33
83.3
Unit
C/W
C/W
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE270/D
2.0 AMPERE
COMPLEMENTARY
POWER DARLINGTON
TRANSISTORS
100 VOLTS
15 WATTS
CASE 77–08
REV 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE270G | 功能描述:两极晶体管 - BJT 2A 100V Bipolar Power NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE271 | 功能描述:两极晶体管 - BJT 2A 100V Bipolar RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE271G | 功能描述:两极晶体管 - BJT 2A 100V Bipolar Power PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE2801 | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTORS(10A,60V,75W) |
| MJE2801T | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTORS(10A,60V,75W) |
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