参数资料
型号: MJW16018
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS
中文描述: 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE
文件页数: 3/8页
文件大小: 366K
代理商: MJW16018
3
Motorola Bipolar Power Transistor Device Data
C
V
V
0.1
IC, COLLECTOR CURRENT (AMPS)
0.2
1
5
1
0.7
0.5
10
7
5
IC, COLLECTOR CURRENT (AMPS)
1
0.5
0.2
0.2
Figure 3. Collector–Emitter Saturation Region
5
0.5
0.1
0.2
0.3
1
10
3
7
Figure 4. Base–Emitter Saturation Region
Figure 5. Collector Cutoff Region
104
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10–1
0
0.1
IC/IB = 2.5
TC = 25
°
C
2
10
–0.4
Figure 6. Typical Capacitance
10K
VCB, COLLECTOR–BASE VOLTAGE (VOLTS)
TC = 25
°
C
Cib
1
,
I
μ
0.3
TC = 25
°
C THRU 100
°
C
103
102
101
100
–0.2
+0.2
+0.4
+0.6
TJ = 150
°
C
125
°
C
100
°
C
75
°
C
REVERSE
FORWARD
25
°
C
VCE = 250 V
1K
100
1
2
5
10
20
50
100
200
500
1K
IC/IB = 2.5
TC = 100
°
C
IC/IB = 5
TC = 25
°
C
IC/IB = 5
TC = 100
°
C
0.5 0.7
5
2
5
IC/IB = 2.5
0.1
0.07
0.05
3
2
10
3
2
0.7
0.3
0.3
0.7
3
7
Cob
TYPICAL STATIC CHARACTERISTICS
t
Figure 7. Storage Time
Figure 8. Inductive Switching Fall Time
IC, COLLECTOR CURRENT (AMPS)
2
3
5
7
10
0.2
,
t
1
IC, COLLECTOR CURRENT (AMPS)
2
3
5
7
10
1000
700
500
200
70
50
30
20
10
1
VBE(off) = 2 V
TC = 100
°
C
300
100
NO BAKER CLAMP
BAKER CLAMPED
NO BAKER CLAMP
BAKER CLAMPED
VBE(off) = 2 V
TC = 100
°
C
IC/IB = 2.5
2.5
20
7
5
3
2
1
0.5
10
0.7
0.3
μ
5
5
IC/IB = 2.5
5
5
2.5
TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS
相关PDF资料
PDF描述
MJ16020 NPN SILICON POWER TRANSISTOR 30 AMPERES 450 VOLTS
MJ16020 NPN SILICON POWER TRANSISTOR
MJ16022 NPN SILICON POWER TRANSISTOR
MJ16022 NPN SILICON POWER TRANSISTOR 30 AMPERES 450 VOLTS
MJE1123 Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:2; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight
相关代理商/技术参数
参数描述
MJW16110 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN Silicon Power Transistors
MJW16206 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 500V 12A 3-Pin(3+Tab) TO-247AE 制造商:Rochester Electronics LLC 功能描述:- Bulk
MJW16212 制造商:Rochester Electronics LLC 功能描述:- Bulk
MJW18020 功能描述:两极晶体管 - BJT 20A 450V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJW18020_10 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN Silicon Power Transistors High Voltage Planar