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参数资料
| 型号： | MJ21193 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 16 ampere complementary silicon power transistors 250 volts 250 watts |
| 中文描述： | 16 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 文件页数： | 2/6页 |
| 文件大小： | 173K |
| 代理商： | MJ21193 |
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
—
—
100
μ
Adc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
—
—
100
μ
Adc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)
IS/b
5
2.5
—
—
—
—
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
25
8
—
—
75
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
—
—
2.2
Vdc
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
—
—
—
—
1.4
4
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
hFE
unmatched
hFE
matched
(Matched pair hFE = 50 @ 5 A/5 V)
THD
—
—
0.8
0.08
—
—
%
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT
4
—
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2%
Cob
—
—
500
pF
IC COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
f
T
PNP MJ21193
f
T
NPN MJ21194
IC COLLECTOR CURRENT (AMPS)
0.1
1.0
10
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
8.0
7.0
6.0
4.0
3.0
5.0
1.0
0
2.0
0.1
1.0
10
VCE = 10 V
5 V
TJ = 25
°
C
ftest = 1 MHz
VCE = 5 V
10 V
TJ = 25
°
C
ftest = 1 MHz
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相关代理商/技术参数 |
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|---|---|
| MJ21193_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Silicon Power Transistors |
| MJ21193_09 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Silicon Power Transistors |
| MJ21193G | 功能描述:两极晶体管 - BJT 16A 250V 250W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ21194 | 功能描述:两极晶体管 - BJT 16A 250V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ21194G | 功能描述:两极晶体管 - BJT 16A 250V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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