参数资料
型号: MJ2194
厂商: Motorola, Inc.
英文描述: 16 ampere complementary silicon power transistors 250 volts 250 watts
中文描述: 一六安培互补硅功率晶体管250伏250瓦
文件页数: 1/6页
文件大小: 173K
代理商: MJ2194
1
Motorola Bipolar Power Transistor Device Data
The MJ21193 and MJ21194 utilize Perforated Emitter technology and are
specifically designed for high power audio output, disk head positioners and linear
applications.
Total Harmonic Distortion Characterized
High DC Current Gain – hFE = 25 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.5 A, 80 V, 1 Second
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
VCEX
IC
250
Vdc
Collector–Base Voltage
400
Vdc
Emitter–Base Voltage
5
Vdc
Collector–Emitter Voltage – 1.5 V
400
Vdc
Collector Current — Continuous
Collector Current —
Peak (1)
16
30
Adc
Base Current — Continuous
IB
PD
5
Adc
Total Power Dissipation @ TC = 25
°
C
Derate Above 25
°
C
250
1.43
Watts
W/
°
C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to +200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.7
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
250
Vdc
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
(1) Pulse Test: Pulse Width = 5
μ
s, Duty Cycle
10%.
ICEO
100
μ
Adc
(continued)
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ21193/D
16 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
250 WATTS
*Motorola Preferred Device
CASE 1–07
TO–204AA
(TO–3)
REV 1
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