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参数资料
| 型号： | MJE16106 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER TRANSISTORS 8 AMPERES 400 VOLTS 100 AND 125 WATTS |
| 中文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 文件页数： | 1/10页 |
| 文件大小： | 380K |
| 代理商： | MJE16106 |
1
Motorola Bipolar Power Transistor Device Data
Switchmode Bridge Series
. . . specifically designed for use in half bridge and full bridge off line converters.
Excellent Dynamic Saturation Characteristics
Rugged RBSOA Capability
Collector–Emitter Sustaining Voltage — VCEO(sus) — 400 V
Collector–Emitter Breakdown — V(BR)CES — 650 V
State–of–Art Bipolar Power Transistor Design
Fast Inductive Switching:
tfi = 30 ns (Typ) @ 100 C
tc = 65 ns (Typ) @ 100 C
tsv = 1.3
μ
s (Typ) @ 100 C
Ultrafast FBSOA Specified
100 C Performance Specified for:
RBSOA
Inductive Load Switching
Saturation Voltages
— Pulsed (1)
ICM
16
Base Current — Continuous
IB
6
Adc
0.8
Derated above 25 C
Operating and Storage Temperature
–55 to 150
W/ C
C
Soldering Purposes 1/8
″
from
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE16106/D
POWER TRANSISTORS
8 AMPERES
400 VOLTS
100 AND 125 WATTS
CASE 221A–06
TO–220AB
REV 1
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相关代理商/技术参数 |
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| MJE16204 | 制造商:ON Semiconductor 功能描述:TRANSISTOR, NPN TO-220 |
| MJE170 | 功能描述:两极晶体管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE170G | 功能描述:两极晶体管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE170STU | 功能描述:两极晶体管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE171 | 功能描述:两极晶体管 - BJT 3A 60V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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