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参数资料
| 型号： | MJE341 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER TRANSISTORS NPN SILICON |
| 中文描述： | 0.5 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-225AA |
| 封装： | PLASTIC, CASE 77-09, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 130K |
| 代理商： | MJE341 |
1
Motorola Bipolar Power Transistor Device Data
. . . useful for medium voltage applications requiring high fT such as converters and
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Symbol
VCEO
VCB
VEB
MJE341
150
175
MJE344
200
200
Unit
Vdc
Vdc
Emitter–Base Voltage
3.0
5.0
Vdc
Collector Current — Continuous
500
mAdc
Base Current
250
mAdc
Total Power Dissipation @ TC = 25 C
PD
IC
IB
20
Watts
I
1.0
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.01
0.5
0.1
0.05
0.02
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT TC = 25
°
C
20
40
60
100
300
TJ = 150
°
C
1.0 ms
dc
0.2
30
200
Figure 1. Active Region Safe Operating Area
500
μ
s
ALL
ALL
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion then the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150 C; TC is vari-
able depending on conditions. Second breakdown pulse lim-
its are valid for duty cycles to 10% provided TJ(pk)
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less then the limitations
imposed by second breakdown.
150 C.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE341/D
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
150–200 VOLTS
20 WATTS
CASE 77–08
TO–225AA TYPE
REV 7
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| MJE344 | POWER TRANSISTORS NPN SILICON |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE3439 | 功能描述:两极晶体管 - BJT 0.3A 350V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE3439G | 功能描述:两极晶体管 - BJT 0.3A 350V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE344 | 功能描述:两极晶体管 - BJT 0.5A 200V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE344_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic NPN Silicon Medium?Power Transistor |
| MJE3440 | 功能描述:两极晶体管 - BJT NPN Fast Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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