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参数资料
| 型号： | MJE9780 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | PNP SILICON POWER TRANSISTOR 3.0 AMPERES 150 VOLTS |
| 中文描述： | 3 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 文件页数： | 1/4页 |
| 文件大小： | 75K |
| 代理商： | MJE9780 |
1
Motorola Bipolar Power Transistor Device Data
The MJE9780 is designed for vertical output of 14–inch to 17–inch televisions and
CRT monitors, as well as other applications requiring a 150 volt PNP transistor.
Features:
Standard TO–220AB Package
Gain Range of 50 – 200 at 500 mAdc/10 volts
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
MJE9780
Unit
Collector–Emitter Sustaining Voltage
VCEO
VCBO
VEBO
IC
ICM
150
Vdc
Collector–Base Voltage
200
Vdc
Emitter–Base Voltage
6.0
Vdc
Collector Current — Continuous
Collector Current
— Peak
3.0
5.0
Adc
Total Power Dissipation (TA = 25
°
C)
Derate above 25
°
C
PD
2.0
0.016
Watts
W/
°
C
Total Power Dissipation
Derate above 25
°
C
PD
40
0.32
Watts
W/
°
C
Operating and Storage Temperature
TJ, Tstg
– 55 to 150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
3.12
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″
from Case for 5 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS*
Collector–Emitter Sustaining Voltage
(IC = 50 mA, IB = 0)
VCEO(sus)
°
150
°
—
—
Vdc
Collector–Base Voltage
(IC = 5.0 mAdc)
VCBO
200
—
—
Vdc
Emitter–Base Voltage
(IB = 5.0 mAdc)
VEBO
6.0
—
—
Vdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
—
—
10
μ
Adc
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
* Indicates Pulse Test: P.W. = 300
μ
sec max, Duty Cycle = 2%.
ICBO
—
—
10
μ
Adc
(continued)
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE9780/D
PNP SILICON POWER
TRANSISTOR
3.0 AMPERES
150 VOLTS
*Motorola Preferred Device
CASE 221A–06
TO–220AB
REV 7
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| MJE122 | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:2; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight |
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| MJEC15033TR | 制造商:ON Semiconductor 功能描述: |
| MJF122 | 功能描述:达林顿晶体管 5A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJF122G | 功能描述:达林顿晶体管 5A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJF127 | 功能描述:达林顿晶体管 5A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJF127G | 功能描述:达林顿晶体管 5A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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