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参数资料
| 型号： | MJF127 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | COMPLEMENTARY SILICON POWER DARLINGTONS |
| 中文描述： | 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220 |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 267K |
| 代理商： | MJF127 |
1
Motorola Bipolar Power Transistor Device Data
For Isolated Package Applications
Designed for general–purpose amplifiers and switching applications, where the
mounting surface of the device is required to be electrically isolated from the heatsink
or chassis.
Electrically Similar to the Popular TIP122 and TIP127
100 VCEO(sus)
5 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
High DC Current Gain — 2000 (Min) @ IC = 3 Adc
UL Recognized, File #E69369, to 3500 VRMS Isolation
TA = 25 C)
1500
Collector Current — Continuous
Test No. 3 Per Fig. 16
IC
5
Adc
Derate above 25 C
0.016
W/ C
Operating and Storage Junction Temperature Range
TJ, Tstg
–65 to +150
IC
* Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on
a heatsink with thermal grease and a mounting torque of
≥
6 in. lbs.
(1) Proper strike and creepage distance must be provided.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MF122/D
COMPLEMENTARY
SILICON
POWER DARLINGTONS
5 AMPERES
100 VOLTS
30 WATTS
相关PDF资料 |
PDF描述 |
|---|---|
| MJE122 | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:2; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight |
| MJE127 | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight; Circular Contact Gender:Pin |
| MJF122 | COMPLEMENTARY SILICON POWER DARLINGTONS |
| MJF15030 | COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS 36 WATTS |
| MJF15030 | COMPLEMENTARY SILICON POWER TRANSISTORS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJF127G | 功能描述:达林顿晶体管 5A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJF13007 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| MJF13009 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| MJF15030 | 功能描述:两极晶体管 - BJT 8A 150V 36W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJF15030_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS, 36 WATTS |
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