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参数资料
| 型号： | MJE18604 |
| 厂商： | Motorola, Inc. |
| 英文描述： | POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS |
| 中文描述： | 功率晶体管3安培1600伏特，100瓦 |
| 文件页数： | 1/6页 |
| 文件大小： | 217K |
| 代理商： | MJE18604 |
1
Motorola Bipolar Power Transistor Device Data
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The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
Tight dynamic characteristics and lot to lot low spread (
±
150 ns on storage time) make
it ideally suitable for light ballast applications. Therefore, there is no more a need to
guarantee an hfe window.
Main features:
Low Base Drive Requirement
High DC Current Gain (30 Typical) @ IC = 400 mA
Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active
Antisaturation (H2BIP) Structure which Minimizes the Spread
Integrated Collector–Emitter Free Wheeling Diode Matched with the Power
Transistor
Fully Characterized and Guaranteed Dynamic VCE(sat)
— Peak (1)
8
Base Current
— Peak (1)
IBM
4
*Total Device Dissipation @ TC = 25 C
PD
100
Watt
THERMAL CHARACTERISTICS
1/8
″
from case for 5 seconds
θ
JC
R
θ
JA
62.5
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤
10%.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18604D2/D
POWER TRANSISTORS
3 AMPERES
1600 VOLTS
100 WATTS
TO–220AB
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE18604D2 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS |
| MJE200 | 功能描述:两极晶体管 - BJT 5A 25V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE200_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Silicon Power Plastic Transistors |
| MJE200G | 功能描述:两极晶体管 - BJT 5A 25V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE200STU | 功能描述:两极晶体管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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