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参数资料
| 型号： | MJE16106 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER TRANSISTORS 8 AMPERES 400 VOLTS 100 AND 125 WATTS |
| 中文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 文件页数： | 8/10页 |
| 文件大小： | 380K |
| 代理商： | MJE16106 |
8
Motorola Bipolar Power Transistor Device Data
TURN–ON
Safe turn–on load line excursions are bounded by pulsed
FBSOA curves. The 10
μ
s curve applies for resistive loads,
most capacitive loads, and inductive loads that are clamped
by standard or fast recovery rectifiers. Similarly, the 100 ns
curve applies to inductive loads which are clamped by ultra–
fast recovery rectifiers, and are valid for turn–on crossover
times less than 100 ns (AN952).
At voltages above 75% of V(BR)CEO(sus), it is essential
to provide the transistor with an adequate amount of base
drive VERY RAPIDLY at turn–on. More specifically, safe op-
eration according to the curves is dependent upon base cur-
rent rise time being less than collector current rise time. As a
general rule, a base drive compliance voltage in excess of
10 volts is required to meet this condition (see Application
Note AN875).
TURN–OFF
A bipolar transistor’s ability to withstand turn–off stress is
dependent upon its forward base drive. Gross overdrive vio-
lates the RBSOA curve and risks transistor failure. For this
reason, circuits which use fixed base drive are more likely to
fail at light loads due to heavy overdrive (see Application
Note AN875).
OPERATION ABOVE V(BR)CEO(sus)
When bipolars are operated above collector–emitter
breakdown, base drive is crucial. A rapid application of ade-
quate forward base current is needed for safe turn–on, as is
a stiff negative bias needed for safe turn–off. Any hiccup in
the base–drive circuitry that even momentarily violates either
of these conditions will likely cause the transistor to fail.
Therefore, it is important to design the driver so that its out-
put is negative in the absence of anything but a clean crisp
input signal (see Application Note AN952).
RBSOA
Reversed Biased Safe Operating Area has a first order de-
pendency on circuit configuration and drive parameters. The
RBSOA curves in this data sheet are valid only for the condi-
tions specified. For a comparison of RBSOA results in sever-
al types of circuits (see Application Note AN951).
DESIGN SAMPLES
Transistor parameters tend to vary much more from wafer
lot to wafer lot, over long periods of time, than from one de-
vice to the next in the same wafer lot. For design evaluation
it is advisable to use transistors from several different date
codes.
BAKER CLAMPS
Many unanticipated pitfalls can be avoided by using Baker
Clamps. MUR105 and MUR170 diodes are recommended
for base drives less than 1 amp. Similarly, MUR405 and
MUR470 types are well–suited for higher drive requirements
(see Article Reprint AR131).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE16204 | 制造商:ON Semiconductor 功能描述:TRANSISTOR, NPN TO-220 |
| MJE170 | 功能描述:两极晶体管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE170G | 功能描述:两极晶体管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE170STU | 功能描述:两极晶体管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE171 | 功能描述:两极晶体管 - BJT 3A 60V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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