参数资料
型号: MJ2194
厂商: Motorola, Inc.
英文描述: 16 ampere complementary silicon power transistors 250 volts 250 watts
中文描述: 一六安培互补硅功率晶体管250伏250瓦
文件页数: 4/6页
文件大小: 173K
代理商: MJ2194
4
Motorola Bipolar Power Transistor Device Data
Figure 9. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
S
Figure 10. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
S
Figure 11. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
VB
Figure 12. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
VB
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
IC
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200
°
C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.
PNP MJ21193
NPN MJ21194
TYPICAL CHARACTERISTICS
PNP MJ21193
NPN MJ21194
3.0
2.5
2.0
1.5
1.0
0.5
0
100
10
1.0
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0
100
10
1.0
0.1
0.2
10
1.0
0.1
100
10
1.0
0.1
10
1.0
0.1
100
10
1.0
0.1
100
10
1.0
0.1
100
10
1.0
1000
TJ = 25
°
C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25
°
C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25
°
C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
TJ = 25
°
C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
1 SEC
TC = 25
°
C
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