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参数资料
| 型号： | MJ21193 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 16 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | CASE 1-07, TO-3, 2 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 173K |
| 代理商： | MJ21193 |
4
Motorola Bipolar Power Transistor Device Data
Figure 9. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
S
Figure 10. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
S
Figure 11. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
VB
Figure 12. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
VB
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
IC
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200
°
C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.
PNP MJ21193
NPN MJ21194
TYPICAL CHARACTERISTICS
PNP MJ21193
NPN MJ21194
3.0
2.5
2.0
1.5
1.0
0.5
0
100
10
1.0
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0
100
10
1.0
0.1
0.2
10
1.0
0.1
100
10
1.0
0.1
10
1.0
0.1
100
10
1.0
0.1
100
10
1.0
0.1
100
10
1.0
1000
TJ = 25
°
C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25
°
C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25
°
C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
TJ = 25
°
C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
1 SEC
TC = 25
°
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ21193_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Silicon Power Transistors |
| MJ21193_09 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Silicon Power Transistors |
| MJ21193G | 功能描述:两极晶体管 - BJT 16A 250V 250W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ21194 | 功能描述:两极晶体管 - BJT 16A 250V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ21194G | 功能描述:两极晶体管 - BJT 16A 250V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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